Typical PL spectra near the top end of Sn-doped bulk LE-VB InP at different temperatures.
Temperature-dependent intensities of recombination lines related to Sn dopant.
Calculated axial profile of the Sn concentration (a) and the PL spectrum near the seed and the top of crystal (b).
Electronic structures of InP:Sn. (a) Band structures, where the shaded areas represent the corresponding parts for the undoped InP. The single energy levels are the Sn-induced levels. (b) The total DOS plot. (c) -state DOS of Sn. (d) -state DOS of Sn.
Temperature-dependent energy of the -related recombination line (open circle) and the band gap (solid curve).
The PL mapping of the BB (a) and (b) recombination lines for a (100) wafer at room temperature. The present black-to-white gray scales correspond to the relative intensity.
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