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Coupled donor states in InP by Sn doping
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10.1063/1.2812666
/content/aip/journal/jap/102/10/10.1063/1.2812666
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2812666
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical PL spectra near the top end of Sn-doped bulk LE-VB InP at different temperatures.

Image of FIG. 2.
FIG. 2.

Temperature-dependent intensities of recombination lines related to Sn dopant.

Image of FIG. 3.
FIG. 3.

Calculated axial profile of the Sn concentration (a) and the PL spectrum near the seed and the top of crystal (b).

Image of FIG. 4.
FIG. 4.

Electronic structures of InP:Sn. (a) Band structures, where the shaded areas represent the corresponding parts for the undoped InP. The single energy levels are the Sn-induced levels. (b) The total DOS plot. (c) -state DOS of Sn. (d) -state DOS of Sn.

Image of FIG. 5.
FIG. 5.

Temperature-dependent energy of the -related recombination line (open circle) and the band gap (solid curve).

Image of FIG. 6.
FIG. 6.

The PL mapping of the BB (a) and (b) recombination lines for a (100) wafer at room temperature. The present black-to-white gray scales correspond to the relative intensity.

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/content/aip/journal/jap/102/10/10.1063/1.2812666
2007-11-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coupled donor states in InP by Sn doping
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2812666
10.1063/1.2812666
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