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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
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10.1063/1.2812676
/content/aip/journal/jap/102/10/10.1063/1.2812676
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2812676
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Comparison between simulated (dashed lines) and SIMS profiles (continuous lines) of PAI samples at 20 keV, B implanted with dose after isochronal annealing of 60 s at various temperatures in SOI (a), and in bulk material (b). The graphs clearly evidence the B diffusion toward the surface and the consequent pileup in the surface region.

Image of FIG. 2.
FIG. 2.

(Color online) Amount of untrapped B vs annealing temperature for isochronal treatments of 60 s in PAI SOI samples with Ge at different energies, in order to locate the EOR defects at different depths. The B-implanted dose was .

Image of FIG. 3.
FIG. 3.

(Color online) Interstitial distribution after 60 s annealing at for two different depths of the EOR produced by PAI of Ge at 8 keV (red) and 20 keV (blue) in SOI samples. The sketched areas refer to clustered interstitials. The as-implanted B distribution for a dose of is also reported.

Image of FIG. 4.
FIG. 4.

(Color online) Amount of untrapped B vs annealing temperature for isochronal treatments of 60 s in SOI and bulk Si PAI samples with Ge at different energies. The B-implanted dose was .

Image of FIG. 5.
FIG. 5.

(Color online) Junction depths , evaluated from SIMS profiles at concentration, for B-implanted samples as a function of annealing temperature for 60 s isothermal treatments. The figure shows the results of SOI and bulk Si PAI at 8 and 20 keV. The values obtained from simulations performed without considering surface trapping are also shown (dashed line) for a bulk Si sample PAI at 20 keV.

Image of FIG. 6.
FIG. 6.

(Color online) Comparison between simulated (dashed lines) and SIMS profiles (continuous lines) in SOI samples preamorphized at 8 keV and B implanted at after isochronal annealing for 60 s at various temperatures. For the simulation at , traps at the EOR, in amounts to fit the experimental profile, were also considered in order to describe the effects of B segregation on these defects.

Image of FIG. 7.
FIG. 7.

(Color online) Junction depths , evaluated from SIMS profiles at a concentration of , for B-implanted samples at as a function of annealing temperature for 60 s isothermal treatments. The figure shows the results of SOI and bulk Si PAI at 8 and 20 keV.

Image of FIG. 8.
FIG. 8.

(Color online) Evolution of the B distribution during annealing at of bulk Si samples preamorphized at 20 keV and B implanted at .

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/content/aip/journal/jap/102/10/10.1063/1.2812676
2007-11-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2812676
10.1063/1.2812676
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