XRD patterns for bulk silicon and undoped epitaxial Si layer .
Evolution of Si:As XRD patterns for different As concentrations .
Si:As vertical deformation calculated from the XRD peak shift as a function of inactive As concentration.
Heavily doped sample measured and simulated XRD diagrams .
CBED patterns of bulk Si and medium doped Si:As.
Evolution of the lattice parameter calculated from the XRD peak shift as a function of inactive As concentration.
Evolution of and parameters from PAS as a function of dopant concentration.
Evolution of the medium doped Si:As XRD pattern for as-deposited and spike annealed layers.
High-resolution TEM image and FFT of the epitaxial Si-As doped layer showing a crystal defect.
Evolution of film properties for different doping levels.
Epilayers dopant concentration and corresponding carrier concentration.
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