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Tensile strain in arsenic heavily doped Si
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10.1063/1.2816251
/content/aip/journal/jap/102/10/10.1063/1.2816251
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2816251

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns for bulk silicon and undoped epitaxial Si layer .

Image of FIG. 2.
FIG. 2.

Evolution of Si:As XRD patterns for different As concentrations .

Image of FIG. 3.
FIG. 3.

Si:As vertical deformation calculated from the XRD peak shift as a function of inactive As concentration.

Image of FIG. 4.
FIG. 4.

Heavily doped sample measured and simulated XRD diagrams .

Image of FIG. 5.
FIG. 5.

CBED patterns of bulk Si and medium doped Si:As.

Image of FIG. 6.
FIG. 6.

Evolution of the lattice parameter calculated from the XRD peak shift as a function of inactive As concentration.

Image of FIG. 7.
FIG. 7.

Evolution of and parameters from PAS as a function of dopant concentration.

Image of FIG. 8.
FIG. 8.

Evolution of the medium doped Si:As XRD pattern for as-deposited and spike annealed layers.

Image of FIG. 9.
FIG. 9.

High-resolution TEM image and FFT of the epitaxial Si-As doped layer showing a crystal defect.

Tables

Generic image for table
Table I.

Evolution of film properties for different doping levels.

Generic image for table
Table II.

Epilayers dopant concentration and corresponding carrier concentration.

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/content/aip/journal/jap/102/10/10.1063/1.2816251
2007-11-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensile strain in arsenic heavily doped Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2816251
10.1063/1.2816251
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