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The effect of coupling barrier thickness on structural and optical properties in asymmetrically coupled multiquantum wells
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10.1063/1.2817480
/content/aip/journal/jap/102/10/10.1063/1.2817480
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2817480
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The high-resolution x-ray diffraction spectra for the ( scan around the GaN (0002) plane for the asymmetric MQWs. (a) An insertion layer of with a double crystal diffraction (DCD), (b) an insertion layer of with a DCD, (c) an insertion layer of with triple axis diffraction, and (d) its simulation result.

Image of FIG. 2.
FIG. 2.

(a) A high-resolution TEM image of the sample. (b) A high magnification TEM image for the region.

Image of FIG. 3.
FIG. 3.

The Arrhenius plot of the sample with . The inset shows the temperature-dependent PL spectra.

Image of FIG. 4.
FIG. 4.

The Arrhenius plot of the sample with . The inset shows the temperature-dependent PL spectra.

Image of FIG. 5.
FIG. 5.

(a) The PL (dotted line) and time-integrated TRPL (solid line). (b) The TRPL spectra of the sample with , at 10 K.

Image of FIG. 6.
FIG. 6.

(a) The PL (dotted line) and time-integrated TRPL (solid line) spectra. (b) The representative TRPL spectra of the sample with , at 10 K.

Image of FIG. 7.
FIG. 7.

Schematic energy band diagrams of the sample with : (a) with and (b) without screening.

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/content/aip/journal/jap/102/10/10.1063/1.2817480
2007-11-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of coupling barrier thickness on structural and optical properties in asymmetrically coupled GaN/Al0.5Ga0.5N/GaN multiquantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/10/10.1063/1.2817480
10.1063/1.2817480
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