Real and imaginary parts of the dielectric function vs energy for G58T, G58B, and G58S samples.
Real and imaginary parts of the dielectric function vs energy for G58S samples. The solid lines represent fits of these data to the sum of Eqs. (2) and (3). The fit determined CP parameters are listed in Table II. Individual contributions to of the , , and gaps are also shown by the dashed lines.
Comparison of absorption coefficient and normal-incidence reflectivity between stoichiometric G58S , Cu-poor G58T , and Cu-rich G58B samples.
Spectral dependence of the real refraction index and the extension coefficient for absorption coefficient and normal-incidence reflectivity for G58S sample.
vs photon energy for G58T, G58B, and G58S samples.The solid line shows the calculated result of Eq. (9).
Composition data of the studied samples carried out by EDAX.
Calculated model parameter values using the stimulated annealing algorithm.
Article metrics loading...
Full text loading...