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Does an enhanced yellow luminescence imply a reduction of electron mobility in -type GaN?
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10.1063/1.2821154
/content/aip/journal/jap/102/11/10.1063/1.2821154
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/11/10.1063/1.2821154

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of GaN samples A, B, and C of series I, which have the same Si doping, where the intensity of the near-band-edge luminescence peak at 3.42 eV is normalized. The integrated intensity ratios of the yellow luminescence band to the near-band-edge emission are 2.14, 1.20, and 0.27 for samples A, B, and C, respectively.

Image of FIG. 2.
FIG. 2.

The relationship between electron mobility and relative intensity of yellow luminescence for series I GaN samples, where the same Si dopings are adopted during the materials growth.

Image of FIG. 3.
FIG. 3.

(a) Integrated intensity of the yellow luminescence band to near-band-edge emission (solid squares) and the electron mobility (hollow squares) vs DCXRD FWHM at the (102) plane for the ten GaN samples of series I. (b) The dependence of net carrier concentration on DCXRD FWHM of the (102) plane reflection of series I GaN samples at room temperature, where the same Si doping is employed during the MOCVD growth.

Image of FIG. 4.
FIG. 4.

The dependence of electron mobility on the net carrier concentration for series I samples at room temperature, where the same Si doping is adopted during the materials growth.

Image of FIG. 5.
FIG. 5.

Room temperature PL spectra of GaN samples D, E, F, and G in series II, which have the same DCXRD FWHM at the (102) plane as narrow as 180 arcsec. The intensity of the near-band-edge luminescence peak at 3.42 eV is normalized. The fluxes used in the growth were 0, 0.05, 0.22, and 0.45 nmol/min for samples D, E, F, and G, respectively. The yellow luminescence band is amplified 10 times for the purpose of clarity. Two insets are the dependence of value on flux and the -scan rocking curve of DCXRD for sample G, respectively.

Image of FIG. 6.
FIG. 6.

The relationship between electron mobility and relative intensity of yellow luminescence for series II GaN samples at room temperature, where the different Si doping is adopted during materials growth. An abrupt increase of electron mobility is observed when a light Si doping is adopted in this series of samples for samples E, F, and G.

Tables

Generic image for table
Table I.

Characterization results and Si doping condition of series I -type GaN samples.

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/content/aip/journal/jap/102/11/10.1063/1.2821154
2007-12-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/11/10.1063/1.2821154
10.1063/1.2821154
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