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Erratum: “Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer” [J. Appl. Phys.102, 053519 (2007)]
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2007-12-04
2014-10-26

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Scitation: Erratum: “Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer” [J. Appl. Phys.102, 053519 (2007)]
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/11/10.1063/1.2822239
10.1063/1.2822239
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