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Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Carrier density in silicon block with light and carrier lifetime of (solid line). The total width of the block is and in most of the sample, there is no generation of carriers. The profile is described by a weighted average of the carrier density (dashed line) rather than the arithmetic mean (dotted line).

Image of FIG. 2.
FIG. 2.

(Color online) Spreadsheet evaluation for a wafer with front and rear surface recombination velocities of 100 and , respectively, bulk lifetime of , and illuminated with light having an absorption coefficient of . The arithmetic mean is 20% lower than the weighted average.

Image of FIG. 3.
FIG. 3.

Comparison of analytical model to PC1D numerical model. The light intensity has been adjusted to ensure a consistent minority-carrier density of .

Image of FIG. 4.
FIG. 4.

Experimental setup for the measurement of lifetime in blocks of silicon. Lifetime in the block is determined from measurements of light intensity and photoconductivity.

Image of FIG. 5.
FIG. 5.

(Color online) Flash lamp spectrum and the transmission into silicon for each filter. The filter curves are the transmission of the Schott filter multiplied by the transmission into a bare piece of silicon.

Image of FIG. 6.
FIG. 6.

(Color online) Bulk lifetime as determined from the measured (effective) lifetime for a block of material with surface recombination velocity of at the front surface.

Image of FIG. 7.
FIG. 7.

Comparison of experimental data on a multicrystalline block with the theoretical prediction for two different filters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density