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Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors
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10.1063/1.2821697
/content/aip/journal/jap/102/12/10.1063/1.2821697
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/12/10.1063/1.2821697
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of the dielectric layers coated on the ITO glass by (a) -beam evaporation and (b) IBAD, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The refractive index (left axis) and the packing density (right axis) of the dielectric layers by -beam evaporation and IBAD. (b) Plots of the characteristics of both dielectrics measured from the Au/dielectrics/ITO structure.

Image of FIG. 3.
FIG. 3.

(Color online) and curves obtained from our pentacene TFTs with both dielectrics under a drain saturation condition .

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/content/aip/journal/jap/102/12/10.1063/1.2821697
2007-12-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/12/10.1063/1.2821697
10.1063/1.2821697
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