(a) Schematic of the studied samples: thermal oxide Si multilayer, composed of layers with orthogonal anisotropies, represented by arrows. (b) Longitudinal and transversal hysteresis loops of a FeCoB multilayer deposited on a thermal oxide Si substrate (left) and with a Mo buffer layer (right).
Bar diagram showing the magnetic measurements of FeCoB films grown on a thermal oxide Si substrate without buffer and with different fixed and rotating buffers. The coercive field along the hard axis, the anisotropy field, and the ratio are represented for every sample.
Low-angle x-ray diffractograms for the Cu, Mo, Cr, and Al buffers as a function of the deposition procedure. To the left, buffers where the substrate was rotated during the sputtering process. To the right, buffers where the substrate was at a fixed angle during deposition.
Values of , , and CTE of the materials used as a buffer and the substrate . Calculated values of the defined parameter are displayed as well, and next to them the easy and hard axis coercive fields and the anisotropy field for the rotating-buffer samples.
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