Epitaxial layer structures for thin and thick SRBs generated by incorporating C.
Impact of annealing temperature on rms roughness for thin (415 nm) and thick (945 nm) SRB material. Measurements were performed by AFM on scan areas: (a) macroroughness (all correlation lengths) of 12 nm thick strained Si layers on thin and thick SRBs; (b) microroughness (filtered correlation lengths, ) of 12 nm thick strained Si layers on thin and thick SRBs. denotes the strained Si layer thickness.
Impact of annealing temperature on rms roughness for strained Si layers on thin SRB. Measurements were performed by AFM on scan areas: (a) macroroughness of strained Si layers of 12, 30, and 80 nm grown on thin SRBs; (b) microroughness of strained Si layers of 12, 30, and 80 nm grown on thin SRBs.
3D AFM image of an 80 nm thick strained Si layer on thin SRB after anneal. The typical height of the hillocks is .
Raman spectra for 12 and 80 nm strained Si layers on thin SRBs prior to annealing. Data fitted to the strained Si peak are also shown. The downward shift of the peaks for both the 12 and 80 nm Si layers from the bulk Si peak position indicates that the Si exhibits tensile strain. A larger downward shift is observed for the 12 nm strained Si layer compared with the 80 nm layer, indicating greater tensile strain.
Impact of annealing temperature on the density of threading dislocations in 12 nm thick strained Si layers grown on thin and thick SRBs.
Density of threading dislocations in the as-grown material and annealed material. The first point from left to right is the TDD in the thin SRB; the other three points correspond to TDD in strained Si layers of different thicknesses. Areas measured were .
Impact of anneal temperature on surface defect density in 80 nm strained Si layer on thin SRB.
Tilt SEM view of a stacking fault in an 80 nm strained Si on thin SRB revealed by Secco etching. A cavern was formed in the SRB beneath the SF due to the faster etch rate in SiGe.
Impact of strained Si layer thickness on filtered surface microroughness for thin (415 nm) and thick (945 nm) SRBs generated using C compared with conventional step-graded SRBs. The final Ge content in all SRBs is . All measurements were performed on as-grown samples.
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