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Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures
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10.1063/1.2743883
/content/aip/journal/jap/102/2/10.1063/1.2743883
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2743883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Annihilation parameters and as a function of positron implantation energy for samples grown on undoped GaSb substrate. Indicated in the figure is also the mean positron implantation depth. The dashed vertical lines indicate where the mean implantation depth coincides with the interface capping layer/superlattice structure and superlattice structure/substrate.

Image of FIG. 2.
FIG. 2.

Annihilation parameters and as a function of positron implantation energy for samples grown on Te-doped GaSb substrate. Indicated in the figure is also the mean positron implantation depth. The dashed vertical lines indicate where the mean implantation depth coincides with the interface capping layer/superlattice structure and superlattice structure/substrate.

Image of FIG. 3.
FIG. 3.

plot for the samples grown on undoped substrates. The arrows indicate increasing positron implantation energy.

Image of FIG. 4.
FIG. 4.

plot for the samples grown on Te-doped substrates. The arrows indicate increasing positron implantation energy.

Image of FIG. 5.
FIG. 5.

parameter as a function of measurement temperature for (a) the samples grown on undoped substrate and (b) for samples grown on Te-doped substrates. Both samples have been annealed for 250 s in 908 K.

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/content/aip/journal/jap/102/2/10.1063/1.2743883
2007-07-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2743883
10.1063/1.2743883
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