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Effect of Nd modification on electrical properties of mixed-layer Aurivillius phase
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10.1063/1.2753582
/content/aip/journal/jap/102/2/10.1063/1.2753582
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2753582
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The x-ray diffraction patterns of Nd-doped BIT-SBTi. (a) Overall shape. (b) Close-up with from 22 to 42 deg. (c) Refined lattice constants variation with Nd content.

Image of FIG. 2.
FIG. 2.

SEM images of Nd-doped BIT-SBTi ceramics: (a) , (b) , and (c) .

Image of FIG. 3.
FIG. 3.

Raman spectra of Nd-doped BIT-SBTi with the wave number ranging from 8 to .

Image of FIG. 4.
FIG. 4.

Dependence of the Raman frequencies for Nd-doped BIT-SBTi on different Nd content.

Image of FIG. 5.
FIG. 5.

(a) Polarization-electrical hysteresis loops of Nd-doped BIT-SBTi with , 0.50, and 1.50. (b) Dependence of and of Nd-doped BIT-SBTi on the Nd content. (c) Dependence of piezoelectric coefficient of Nd-doped BIT-SBTi on Nd content.

Image of FIG. 6.
FIG. 6.

Complex impedance curves for the Nd-doped BIT-SBTi at different temperatures: (a) , (b) , (c) , and (d) .

Image of FIG. 7.
FIG. 7.

Arrhenius plots of conductivity of Nd-doped BIT-SBTi: (a) , (b) , (c) , and (d) .

Image of FIG. 8.
FIG. 8.

Temperature dependence of dielectric permittivity and dielectric loss for Nd-doped BIT-SBTi on Nd content.

Image of FIG. 9.
FIG. 9.

Dependence of for Nd- and La-doped BIT-SBTi on doping content.

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/content/aip/journal/jap/102/2/10.1063/1.2753582
2007-07-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Nd modification on electrical properties of mixed-layer Aurivillius phase Bi4Ti3O12-SrBi4Ti4O15
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2753582
10.1063/1.2753582
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