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Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube composites
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10.1063/1.2756386
/content/aip/journal/jap/102/2/10.1063/1.2756386
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2756386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Molecular structure of F12TPN. The inset shows a schematic diagram of the memory device.

Image of FIG. 2.
FIG. 2.

Synthetic routes for the monomers and F12TPN.

Image of FIG. 3.
FIG. 3.

Surface modification and esterification of CNTs.

Image of FIG. 4.
FIG. 4.

(a) characteristics of the ITO/F12TPN/Al device in the on and off states, and (b) on/off state current ratio of the device as a function of applied voltage.

Image of FIG. 5.
FIG. 5.

(Color online) (a) HOMO and LUMO energy levels of the basic unit (BU) of F12TPN, and work functions of ITO, CNT, and Al. (b) Molecular electrostatic potential surface of the basic unit of F12TPN.

Image of FIG. 6.
FIG. 6.

Conduction mechanism of the F12TPN memory devices: (a) the CNT-free device and (b) the CNT-containing device. “엯” stands for the atoms in F12TPN backbone, and “◻” stands for CNT.

Image of FIG. 7.
FIG. 7.

Experimental and fitted characteristics of the CNT-free F12TPN device in the (a) off state and (b) on state.

Image of FIG. 8.
FIG. 8.

(a) characteristics of the CNT-containing F12TPN device exhibiting on/off states, and (b) on/off state current ratio of the device. The polymer matrix in composed of F12TPN doped with CNT.

Image of FIG. 9.
FIG. 9.

Experimental and fitted characteristics of the CNT-containing F12TPN device in the (a) off state and (b) on state.

Image of FIG. 10.
FIG. 10.

characteristics of the CNT-containing F12TPN device exhibiting on/off states. The polymer matrix is composed of F12TPN doped with CNT.

Image of FIG. 11.
FIG. 11.

Effect of the CNT content on the on/off state current ratio and switch-on voltage of the device.

Image of FIG. 12.
FIG. 12.

Stability of the CNT-containing F12TPN device in the on and off state under a constant stress of , and (b) effect of read cycles on the on and off states at a read voltage of . The inset shows the read voltage pulse used.

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/content/aip/journal/jap/102/2/10.1063/1.2756386
2007-07-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube composites
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2756386
10.1063/1.2756386
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