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Cross-sectional scanning tunneling microscopy of biased semiconductor lasers
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10.1063/1.2757006
/content/aip/journal/jap/102/2/10.1063/1.2757006
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2757006
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Scanning electron microscope image of the probe tip positioned over the exposed (110) surface of the buried heterostructure laser.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic and STM images of the DQW device imaged with , . The sample is biased at (b) , and (c) , . Both are plotted on the same scale with (d) averaged line plots across the images stacked with the case on top.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic and STM image of the BHL device, , , with (c) an averaged line plot along the dotted white line marked in (b).

Image of FIG. 4.
FIG. 4.

(Color online) STM images of the BHL device imaged at (a) , and (b) , . The samples are biased at (a) , and (b) , . Noise spikes have been removed from the images, and both are plotted on the same scale with (c) averaged line plots along the dotted white lines stacked with the case on top. The four diagonal stripes in each image are cleave-induced step defects commonly found on laser facets and are not part of the discussion here.

Image of FIG. 5.
FIG. 5.

(Color online) Electrical connections to the sample and tip via a common ground (a) schematically and (b) through a captured image.

Image of FIG. 6.
FIG. 6.

(Color online) Energy level schematic of a tip tunneling into (case 1) a uniformly doped sample (a) without sample bias and (b) with forward sample bias; and (case 2) into a diode (c) without sample bias and (d) with forward sample bias.

Image of FIG. 7.
FIG. 7.

(Color online) Difference in topographic image height from extreme right to extreme left, compared to the case, measured experimentally (solid) with modeled results for the same tunneling conditions overlaid (dashed) as a function of sample bias for (a) DQW (, ). (b) DQW (, ). (c) BHL (, ) (experimental results only).

Image of FIG. 8.
FIG. 8.

Averaged relative quantum well height change under different sample biases relative to the case for (a) DQW structure with , , and (b) BHL structure with , .

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/content/aip/journal/jap/102/2/10.1063/1.2757006
2007-07-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cross-sectional scanning tunneling microscopy of biased semiconductor lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/2/10.1063/1.2757006
10.1063/1.2757006
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