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Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system
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10.1063/1.2768010
/content/aip/journal/jap/102/3/10.1063/1.2768010
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/3/10.1063/1.2768010

Figures

Image of FIG. 1.
FIG. 1.

Atomic concentration of nitrogen to aluminum in the AlN–ZnO cosputtered films as a function of the rf cosputtered power on ZnO target (the theoretical Al atomic ratio is shown in bracket).

Image of FIG. 2.
FIG. 2.

Film resistivity, carrier concentration, and Hall mobility of the as-deposited Al–N codoped and undoped ZnO films.

Image of FIG. 3.
FIG. 3.

X-ray diffraction patterns of the as-deposited Al–N codoped ZnO films as well as the undoped ZnO and AlN films.

Image of FIG. 4.
FIG. 4.

X-ray diffraction patterns of the Al–N codoped (theoretical Al atomic ratio of 10%) and undoped ZnO films deposited on silicon substrates annealed at a temperature of under nitrogen ambient for .

Image of FIG. 5.
FIG. 5.

Room temperature PL spectra of the Al–N codoped (theoretical Al atomic ratio of 10%) and undoped ZnO films deposited on silicon substrates annealed at a temperature of under nitrogen ambient for .

Image of FIG. 6.
FIG. 6.

Typical XPS spectra of (a) Zn and (b) N core level for the Al–N codoped and undoped ZnO films deposited on silicon substrates annealed at a temperature of under nitrogen ambient for .

Tables

Generic image for table
Table I.

Detailed cosputtered deposition conditions of the AlN–ZnO cosputtered films.

Generic image for table
Table II.

Electrical properties of the Al–N codoped ZnO films (theoretical Al atomic ratio of 10%) deposited on silicon substrates annealed at various temperatures under nitrogen ambient for .

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/content/aip/journal/jap/102/3/10.1063/1.2768010
2007-08-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/3/10.1063/1.2768010
10.1063/1.2768010
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