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The effect of diffusion-limited lifetime on implied current voltage curves based on photoluminescence data
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10.1063/1.2756529
/content/aip/journal/jap/102/4/10.1063/1.2756529
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2756529
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Value of bulk lifetime which results in 1% and 10% differences between effective lifetime and surface lifetime for (black dashed) type and (red solid) type on thick substrate.

Image of FIG. 2.
FIG. 2.

Output of PC1D simulations of thick silicon solar cells; (a) with various values of shunt resistance, data presented as (open symbols) implied voltage calculated using Suns-PL data and (solid symbols) actual terminal voltage, and (b) carrier profiles for selected illumination intensities for the cell with shunt resistance.

Image of FIG. 3.
FIG. 3.

PC1D simulations of Suns-PL curves of a thick silicon solar cell with a shunted front junction under different illumination wavelengths.

Image of FIG. 4.
FIG. 4.

(Color online) Electrical characterization of three shunted IBBC solar cells, measured with (black dashed lines) Suns Voc, (blue solid lines) Suns-PL, and (red dotted lines) Suns-PL with correction from Eq. (7).

Image of FIG. 5.
FIG. 5.

(Color online) Suns-PL curves of a -type FZ wafer with a phosphorous diffused high-low junction on the rear surface, a boron diffused junction on the front, and thermal oxide on both sides after a small scratch through junction with a diamond pen (Ref. 15). Experimental data (red dotted line) illuminated from front side, (blue line) illuminated from rear side, and (black dashed line) PC1D simulations of terminal voltage, (black squares) simulated Suns-PL illuminated from front, (white triangles) Suns-PL illuminated from rear. (a) With no correction; (b) after correction as described in Eq. (7).

Image of FIG. 6.
FIG. 6.

(Color online) Suns-PL characterization of four test structures fabricated on thick, -type FZ silicon wafers, with a phosphorous diffused high-low junction on the rear surface, a boron diffused junction on the front, and thermal oxide on both sides. Samples have phosphorous diffused laser grooves through the boron emitter that contain sintered nickel. Suns-PL data presented (blue solid line) with no correction and (red dotted line) after correction as described in Eq. (7). For comparison a Suns-PL curve of one sample is shown before the nickel sintering process (black dashed line).

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/content/aip/journal/jap/102/4/10.1063/1.2756529
2007-08-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of diffusion-limited lifetime on implied current voltage curves based on photoluminescence data
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2756529
10.1063/1.2756529
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