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Low-temperature-grown GaAs: Modeling of transient reflectivity experiments
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10.1063/1.2763971
/content/aip/journal/jap/102/4/10.1063/1.2763971
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2763971

Figures

Image of FIG. 1.
FIG. 1.

Transient reflectivity signals (linear scale) recorded for sample and sample as-grown and after various annealing conditions.

Image of FIG. 2.
FIG. 2.

Transient reflectivity signals (log scale) for sample (top) and sample (bottom) as-grown and annealed 60 s for 500 and (solid lines) and their respective modeling (dotted lines).

Image of FIG. 3.
FIG. 3.

Transient reflectivity signal for sample annealed (solid) and its respective simulation (dotted). Inset: Infrared transient transmission signal for the same sample (solid) and hole density deduced from the same simulation (dotted). The decay rate is the same for both curves.

Image of FIG. 4.
FIG. 4.

Recorded transient reflectivity data for samples and annealed (solid lines) and the corresponding calculated curves (dotted lines).

Image of FIG. 5.
FIG. 5.

Schematic energy bands illustrating the model parameters.

Image of FIG. 6.
FIG. 6.

Calculated carrier densities for the samples annealed (a) and as-grown (b). Solid lines: without trap absorption; dotted: with trap absorption.

Image of FIG. 7.
FIG. 7.

Calculated hole, electron, and nonionized deep-donor populations for sample annealed . Inset: contributions of the BGR (dotted line), BF (solid line), and DD absorption (dashed line, ) to the .

Image of FIG. 8.
FIG. 8.

Calculated for electrons (we set , ) and holes (we set , ), as a function of the probe wavelength (solid lines), for the different contributions (BF, dotted and BGR, dashed). The calculation takes into account the effects of the BF, BGR, and DD absorption. We remind that was found to be almost proportional to .

Image of FIG. 9.
FIG. 9.

Calculated transient reflectivity curves for an injection pulse of electron-hole pairs and various values of (ranging from to ).

Image of FIG. 10.
FIG. 10.

Calculated transient reflectivity curves for an injection pulse of and various values of (1, 2.5, 5, 6, 6.5, and , with fixed ). Inset: zoom of the 0.5–1.2 ps region.

Tables

Generic image for table
Table I.

Sample parameters and growth conditions. For , normal characters: measured. For and all values, italic characters: deduced from the fit.

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/content/aip/journal/jap/102/4/10.1063/1.2763971
2007-08-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature-grown GaAs: Modeling of transient reflectivity experiments
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2763971
10.1063/1.2763971
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