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Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in heterostructures
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10.1063/1.2769776
/content/aip/journal/jap/102/4/10.1063/1.2769776
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769776
/content/aip/journal/jap/102/4/10.1063/1.2769776
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/content/aip/journal/jap/102/4/10.1063/1.2769776
2007-08-22
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1−xN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769776
10.1063/1.2769776
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