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Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in heterostructures
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10.1063/1.2769776
/content/aip/journal/jap/102/4/10.1063/1.2769776
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769776
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRR patterns of Sample No. 1 and No. 2 as a function of glancing angle. For clarity, each pattern is vertically shifted. Dashed-and-dotted line: position of the critical angle for . Inset: FT power spectra of Sample No. 1 and No. 2 as a function of layer thickness.

Image of FIG. 2.
FIG. 2.

AFM images of the surfaces in the area of . (a) Sample No. 1. (b) Sample No. 2. Gray scale: height of 3.5 nm for (a), 2.5 nm for (b).

Image of FIG. 3.
FIG. 3.

PL (logarithmic scale) and reflectance (linear scale) spectra as a function of photon energy at 10 K. (a) Sample No. 1. (b) Sample No. 2. Dashed line: guide for the eyes.

Image of FIG. 4.
FIG. 4.

PL spectra of Sample No. 1 at 10, 30, and 50 K.

Image of FIG. 5.
FIG. 5.

Shift of the exciton transition energy at the point, , calculated as a function of biaxial strain. Subscript : band of the hole forming the exciton (, , or ). Index : exciton principal quantum number .

Image of FIG. 6.
FIG. 6.

PLE and reflectance spectra as a function of photon energy at 10 K. Detection energy for the PLE spectra: 3.482 eV. (a) and (b) Sample No. 1. (c) and (d) Sample No. 2.

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/content/aip/journal/jap/102/4/10.1063/1.2769776
2007-08-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1−xN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769776
10.1063/1.2769776
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