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Growth modes of nanocrystalline Ni/Pt multilayers with deposition temperature
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10.1063/1.2769785
/content/aip/journal/jap/102/4/10.1063/1.2769785
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769785

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Experimental (thick) and calculated (thin line) high-angle x-ray diffraction pattern for a multilayer grown on Si(111).

Image of FIG. 2.
FIG. 2.

(Color online) Experimental (thick) and calculated (thin line) high-angle x-ray diffraction pattern for a multilayer grown on Si(111).

Image of FIG. 3.
FIG. 3.

(Color online) AFM images and grain-size distributions for nanocrystalline Ni/Pt multilayers grown on glass at different thickness: (a) 85, (b) 108, (c)138, and (d) 206 nm. The size of the images is .

Image of FIG. 4.
FIG. 4.

(a) Variation of the mean grain size with film thickness, for the four samples grown on glass, using the values given in Table I. (b) Variation of average root-mean-square roughness for the four samples grown on glass, with film thickness, using values given in Table I.

Image of FIG. 5.
FIG. 5.

(Color online) 3D AFM images for three multilayers with the same thickness, grown on silicon, glass, and Kapton and the corresponding substrates silicon, glass, and Kapton.

Image of FIG. 6.
FIG. 6.

(Color online) AFM image recorded on the surface of a multilayer of thickness grown at on silicon. A bimodal growth mode is clearly observed. The size of the images is .

Image of FIG. 7.
FIG. 7.

(a) TEM micrograph showing the crystal structure of the modulated multilayer, above the buffer layer, and the coexistence of spherical and columnar grains. Interdiffusion between adjacent Pt and Ni layers is important due to the extremely small values and along the growth direction (inset). The average lattice spacing in both Pt, Ni layers remains constant suggesting the adoption of an average lattice by the multilayer. Columnar grains are denoted with . (b) Corresponding SAED pattern of the multilayer illustrating its polycrystalline nature. The relative ratio of the two inner rings indicate a fcc cubic lattice, whereas arc-shaped reflections show a preferential growth orientation of the columnar grains within around the growth direction. (c) Corresponding SAED pattern of the Si substrate depicting the growth direction of the multilayer.

Image of FIG. 8.
FIG. 8.

The dashed lines represent the limits for the ln GRAIN for many metallic thin film systems as a function of the ratio (see Ref. 30), while the arrows indicate the expected ranges of grain sizes for our Ni/Pt multilayer series grown at (thick) and (thin arrow).

Image of FIG. 9.
FIG. 9.

X-ray diffraction pattern recorded for a multilayer grown at on glass. The multilayer is 12 years old. Despite the extremely thin Pt layers the multilayer structure maintains, as can be mainly seen by the presence of three small-angle multilayer diffractions. In the inset one may see the small angle XRD pattern recorded on the as-prepared sample (dashed line) and 12 years after. The patterns in the inset have been vertically shifted for better presentation.

Image of FIG. 10.
FIG. 10.

Polar Kerr rotation hysteresis loop for a multilayer grown at on glass. The multilayer is 12 years old.

Tables

Generic image for table
Table I.

Summary of surface parameters obtained from the analysis of AFM measurements for nanocrystalline Ni/Pt multilayers grown on various substrates and with various thicknesses, as indicated. The maximum error bar in the determination of the mean grain size for both methods (XRD and AFM) is of about .

Generic image for table
Table II.

Summary of roughness parameters for a set of three multilayers with same total thickness , grown on silicon, glass, and Kapton. The substrate roughness parameters are also shown. The maximum error bars are of the order of .

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/content/aip/journal/jap/102/4/10.1063/1.2769785
2007-08-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth modes of nanocrystalline Ni/Pt multilayers with deposition temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2769785
10.1063/1.2769785
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