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Forward current-voltage characteristics of an AlGaInP light-emitting diode
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10.1063/1.2772530
/content/aip/journal/jap/102/4/10.1063/1.2772530
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2772530
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Forward curves on semilog scale (a) and on linear scale (b). The points represent experimental data while the curves represent the simulations. From bottom to top, the temperatures of the curves increase from 300 to 470 K in steps of 10 K.

Image of FIG. 2.
FIG. 2.

Solid points represent the relation between saturation current and temperature obtained from Fig. 1 and the line represents the least-square fit. Solid points in the inset represent the series resistances at various temperatures. The scattering of the series resistances around the least-square fit (solid line) is caused by the different probing pressures.

Image of FIG. 3.
FIG. 3.

Band diagram of ideal uniformly doped homojunction at zero bias (thin lines) and at forward bias (thick lines). : conduction band minimum. : valence band maximum. : build-in potential. : applied forward bias.

Image of FIG. 4.
FIG. 4.

(a) Band diagram of active layer of AlGaInP LED at zero bias (thin lines) and at forward bias (thick lines). : band gap of barrier, equaling barrier to the motion of an electron from the -type region to the -type region. : applied forward bias. (b) Band gaps of band (solid line) and band (dashed line) at various in .

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/content/aip/journal/jap/102/4/10.1063/1.2772530
2007-08-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Forward current-voltage characteristics of an AlGaInP light-emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/4/10.1063/1.2772530
10.1063/1.2772530
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