(a) Schematic cross section of a T-wire laser structure, spatially resolved micro-PL spectra at 5 K when excitation light was irradiated on (b) the (110) surface and scanned along to and on (c) the surface and scanned along to with a step of . The crude arrows in the structure indicate the carrier injection path.
Schematic layout for optical measurements. OBJ: objective lens; TiS: titanium sapphire; SM: switching mirror; BS: beam splitter; P: polarizer; and BPF: bandpass filter.
Current-voltage characteristics at forward bias at temperatures from 5 K to room temperature.
High-resolution EL and lasing spectra in cw TE modes from a HR-Au-coated T-wire-laser diode at (a) 30 K and (b) 5 K.
Light output power vs injection current in cw TE modes from a HR-Au-coated T-wire-laser diode at cryostat temperatures (a) between 30 and 70 K and (b) from 5 to 80 K and (c) temperature dependence of threshold current and external differential quantum efficiency .
(Color online) Images of EL emission patterns of uncoated T-wire-laser diode at (a) 30 K and (b) 5 K with increasing current injection. Injection current is denoted on each global image and bandpass photon energy is denoted on each spectrally resolved image. Inset shows the schematic structure of the sample. White lines superimposed on each image denote the sample structure; hatching shows T-shaped optical waveguide surrounded by three cladding layers.
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