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Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer
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10.1063/1.2776218
/content/aip/journal/jap/102/5/10.1063/1.2776218
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2776218
/content/aip/journal/jap/102/5/10.1063/1.2776218
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/content/aip/journal/jap/102/5/10.1063/1.2776218
2007-09-14
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2776218
10.1063/1.2776218
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