1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer
Rent:
Rent this article for
USD
10.1063/1.2776218
/content/aip/journal/jap/102/5/10.1063/1.2776218
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2776218
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

DCXRD scans for (0002) reflection from the InGaN/GaN MQWs.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra of the InGaN/GaN MQWs.

Image of FIG. 3.
FIG. 3.

DCXRD scans for (0002) reflection from the InGaN/GaN.

Image of FIG. 4.
FIG. 4.

Room temperature PL spectra of the InGaN/GaN MQWs.

Image of FIG. 5.
FIG. 5.

EL spectra for sample C without ERL and sample D with ERL.

Loading

Article metrics loading...

/content/aip/journal/jap/102/5/10.1063/1.2776218
2007-09-14
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2776218
10.1063/1.2776218
SEARCH_EXPAND_ITEM