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Effect of acceptor (Mg) concentration on the electrical resistance at room and high temperatures of acceptor (Mg)-doped ceramics
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10.1063/1.2777119
/content/aip/journal/jap/102/5/10.1063/1.2777119
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2777119

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Average grain sizes of acceptor (Mg)-doped ceramics that were sintered at as a function of the Mg concentration for different oxygen partial pressures.

Image of FIG. 2.
FIG. 2.

(Color online) Electrical resistivities of specimens that were sintered at at room temperature for different oxygen partial pressures with an increase of acceptor concentration (two times Mg concentration).

Image of FIG. 3.
FIG. 3.

(Color online) Calculated electron and each defect concentrations with the acceptor concentration at in (a) air , (b) , (c) , and (d) .

Image of FIG. 4.
FIG. 4.

(Color online) Calculated electron and each defect concentrations with the acceptor concentration at room temperature when the defect distributions at in (a) air , (b) , (c) , and (d) are frozen in.

Image of FIG. 5.
FIG. 5.

(Color online) Calculated electrical bulk resistivities with the acceptor concentration at room temperature when the defect distributions at in (a) air , (b) , (c) , and (d) are frozen in.

Image of FIG. 6.
FIG. 6.

(Color online) Electrical resistivities at high temperature vs time of specimens sintered at in air , which were measured by applying voltage step of dc with the time period for each step being , and the measurement was continued at for an additional .

Image of FIG. 7.
FIG. 7.

(Color online) Electrical resistivities at high temperature vs time of specimens that were sintered at for and of ( atmosphere, ) followed by reoxidation at and of ( atmosphere, ), which corresponds to the conventional sintering condition of BME MLCCs. The measurement conditions are the same as shown in Fig. 6.

Image of FIG. 8.
FIG. 8.

(Color online) Calculated barrier height of grain boundaries in acceptor (Mg)-doped ceramics as a function of the electric field strength applied at grain boundaries for different acceptor concentrations at .

Image of FIG. 9.
FIG. 9.

Microstructures of specimens sintered at in air : (a) Mg-doped ceramics with large grain size, (b) Mg-doped ceramics with small grain size, and (c) undoped ( Mg) ceramics with very large grain size.

Image of FIG. 10.
FIG. 10.

(Color online) Electrical resistivities at high temperature vs time of (a) Mg-doped ceramics with large and small grain sizes, respectively, and (b) undoped ( Mg) and Mg-doped ceramics with very large and small grain sizes, respectively. The specimens were sintered at in air .

Tables

Generic image for table
Table I.

Compositions of Mg-doped ceramic specimens and sintering conditions.

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/content/aip/journal/jap/102/5/10.1063/1.2777119
2007-09-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of acceptor (Mg) concentration on the electrical resistance at room and high (200°C) temperatures of acceptor (Mg)-doped BaTiO3 ceramics
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/5/10.1063/1.2777119
10.1063/1.2777119
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