(a) Our top-contact, bottom gate pentacene TFT. The SPM images and the morphological profiles of the PVCi layer (b) without the LPUV exposure and (c) with the LPUV exposure for 180 s. Morphological profiles were obtained along the black dotted lines in the SPM images.
(a) The phase retardation of the bare PVCi layer and that of the pentacene layer itself deposited on it, (b) the phase retardation of the LPUV exposed PVCi layer for 180 s and that of the pentacene layer itself deposited on it, and (c) the phase retardation of the PVCi layer as a function of the LPUV exposure time. The right column in (a) and (b) shows the phase retardation of the pentacene layer itself having no directional alignment.
X-ray diffraction results for a pentacene film of 60 nm thick grown on (a) the bare PVCi layer and (b) the LPUV exposed PVCi layer for 180 s. The corresponding FWHMs, and , of the first order diffraction peaks in (001) are shown in (c) and (d).
The SPM images of the layer-by-layer growth of the pentacene film (a) on the bare PVCi layer and (b) on the LPUV exposed PVCi layer for 180 s. The nominal thickness of each pentacene film is 4, 11, 18, 21, and .
The output characteristic curves of our four pentacene TFTs with four different PVCi insulator layers, exposed to the LPUV for (a) 0, (b) 30, (c) 180, and (d) 600 s.
(a) The output characteristic curves measured along two directions of the current flow, perpendicular (denoted by a solid line) and parallel (denoted by a dashed line) to the LPUV polarization, (b) the corresponding transfer characteristic curves perpendicular (represented by open circles) and parallel to (represented by open squares) the LPUV polarization, and (c) the mobility in the pentacene TFT as a function of the phase retardation of the LPUV exposed PVCi layer. The solid line represents a linear fit.
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