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Structural origin of the mobility enhancement in a pentacene thin-film transistor with a photocrosslinking insulator
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10.1063/1.2780869
/content/aip/journal/jap/102/6/10.1063/1.2780869
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2780869
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Our top-contact, bottom gate pentacene TFT. The SPM images and the morphological profiles of the PVCi layer (b) without the LPUV exposure and (c) with the LPUV exposure for 180 s. Morphological profiles were obtained along the black dotted lines in the SPM images.

Image of FIG. 2.
FIG. 2.

(a) The phase retardation of the bare PVCi layer and that of the pentacene layer itself deposited on it, (b) the phase retardation of the LPUV exposed PVCi layer for 180 s and that of the pentacene layer itself deposited on it, and (c) the phase retardation of the PVCi layer as a function of the LPUV exposure time. The right column in (a) and (b) shows the phase retardation of the pentacene layer itself having no directional alignment.

Image of FIG. 3.
FIG. 3.

X-ray diffraction results for a pentacene film of 60 nm thick grown on (a) the bare PVCi layer and (b) the LPUV exposed PVCi layer for 180 s. The corresponding FWHMs, and , of the first order diffraction peaks in (001) are shown in (c) and (d).

Image of FIG. 4.
FIG. 4.

The SPM images of the layer-by-layer growth of the pentacene film (a) on the bare PVCi layer and (b) on the LPUV exposed PVCi layer for 180 s. The nominal thickness of each pentacene film is 4, 11, 18, 21, and .

Image of FIG. 5.
FIG. 5.

The output characteristic curves of our four pentacene TFTs with four different PVCi insulator layers, exposed to the LPUV for (a) 0, (b) 30, (c) 180, and (d) 600 s.

Image of FIG. 6.
FIG. 6.

(a) The output characteristic curves measured along two directions of the current flow, perpendicular (denoted by a solid line) and parallel (denoted by a dashed line) to the LPUV polarization, (b) the corresponding transfer characteristic curves perpendicular (represented by open circles) and parallel to (represented by open squares) the LPUV polarization, and (c) the mobility in the pentacene TFT as a function of the phase retardation of the LPUV exposed PVCi layer. The solid line represents a linear fit.

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/content/aip/journal/jap/102/6/10.1063/1.2780869
2007-09-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural origin of the mobility enhancement in a pentacene thin-film transistor with a photocrosslinking insulator
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2780869
10.1063/1.2780869
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