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Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric
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10.1063/1.2784008
/content/aip/journal/jap/102/6/10.1063/1.2784008
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784008

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross section of trilayer inverted-staggered TFT structure. The trilayer is composed of nitride gate dielectric, channel layer, and passivation nitride. The channel layer itself is composed of a bilayer.

Image of FIG. 2.
FIG. 2.

Raman spectrum of thick nc-Si film. The solid line is the measured signal. To find film crystallinity, the signal is decomposed into two Gaussian peaks (dashed lines) centered at 517–520 and , representing crystalline and amorphous phases, respectively.

Image of FIG. 3.
FIG. 3.

Transmission electron microscope (TEM) cross section image of the nc-Si film, (a) scale bar, showing the entire cross section, and (b) scale bar, showing the interface between the nitride and the nc-Si layer.

Image of FIG. 4.
FIG. 4.

FTIR spectra of various nitride films with of 1.3, 1.2, and 1.

Image of FIG. 5.
FIG. 5.

Capacitance-voltage characteristics of nitrides with of (a) 1.3, (b) 1.2, and (c) 1. The curves were obtained by sweeping the voltage across MIS capacitors in forward (negative to positive) and reverse (positive to negative) directions.

Image of FIG. 6.
FIG. 6.

Leakage current density as a function of electric field, for the different silicon nitrides.

Image of FIG. 7.
FIG. 7.

(a) Transfer and (b) output characteristics of TFT1. The aspect ratio is . The gate dielectric is 1.3.

Image of FIG. 8.
FIG. 8.

(a) Transfer and (b) output characteristics of TFT2. The aspect ratio is . The gate dielectric is 1.2.

Image of FIG. 9.
FIG. 9.

(a) Transfer and (b) output characteristics of TFT3. The aspect ratio is . The gate dielectric is 1.

Image of FIG. 10.
FIG. 10.

Threshold voltage shift as a function of stress time for gate voltages of (a) and (b) in the linear regime. In part (a), the threshold voltage shift of our group circuit-grade TFT is also shown for comparison (open circles), the data are from Ref. 9.

Image of FIG. 11.
FIG. 11.

Threshold voltage shift as a function of stress time for gate voltages of (a) and (b) in the saturation regime.

Image of FIG. 12.
FIG. 12.

Transfer characteristics of TFT1 in different states: unstressed, stressed for at gate stress, and relaxed for 5 days after stress release at room temperature.

Image of FIG. 13.
FIG. 13.

Transfer characteristics of TFT1 in different states: unstressed, stressed for at gate stress, and stressed for at .

Tables

Generic image for table
Table I.

Summary of TFT performance parameters.

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/content/aip/journal/jap/102/6/10.1063/1.2784008
2007-09-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784008
10.1063/1.2784008
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