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A model for Si, SiCH, , SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer
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10.1063/1.2784016
/content/aip/journal/jap/102/6/10.1063/1.2784016
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784016
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematized steps of the pulsed bias etching model. Phase 1: fluorocarbon deposition. Phase 2: etching of the deposited fluorocarbon layer. Phase 3: material etching.

Image of FIG. 2.
FIG. 2.

Silicon and fluorocarbon thickness evolution during Si etching in plasma with a pulsed bias at and .

Image of FIG. 3.
FIG. 3.

Comparison between experimental (features) and model (lines) averaged etch rates of , SiCH, and porous SiOCH in plasma with a pulsed bias at (black) and (gray).

Image of FIG. 4.
FIG. 4.

Fluorocarbon thick layer averaged etch rates in continuous (triangles and dashed lines) and pulsed modes at (squares and dashed black lines) and (stars and dashed gray lines) compared to modeled etch rates (straight lines).

Image of FIG. 5.
FIG. 5.

Porous SiOCH (triangle), (star), SiCH (square) etch rates in , (25% and 50%), and (25% and 50%) at in continuous mode in function of fluorine on carbon ratio of the fluorocarbon layer.

Image of FIG. 6.
FIG. 6.

Fluorine to carbon ratio of the fluorocarbon layer on porous SiOCH (triangle), (star), SiCH (square), Si (cross), and SiOCH (circle) vs the bias voltage in continuous and pulsed modes.

Image of FIG. 7.
FIG. 7.

Schematic representation of material etch rate and fluorocarbon thickness variations with time over one pulse period.

Image of FIG. 8.
FIG. 8.

Comparison between experimental (features) and enhanced model (lines) averaged etch rates of (a), Si (b), SiCH (c), SiOCH (d), and porous SiOCH (e) in plasma with a pulsed bias at (black) and (gray). In (f), porous SiOCH etch rate model has been corrected at to fit experimental results and the same correction has been applied at (see text).

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/content/aip/journal/jap/102/6/10.1063/1.2784016
2007-09-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784016
10.1063/1.2784016
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