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A model for Si, SiCH, , SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer
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10.1063/1.2784016
/content/aip/journal/jap/102/6/10.1063/1.2784016
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784016
/content/aip/journal/jap/102/6/10.1063/1.2784016
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/content/aip/journal/jap/102/6/10.1063/1.2784016
2007-09-25
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/6/10.1063/1.2784016
10.1063/1.2784016
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