Schematized steps of the pulsed bias etching model. Phase 1: fluorocarbon deposition. Phase 2: etching of the deposited fluorocarbon layer. Phase 3: material etching.
Silicon and fluorocarbon thickness evolution during Si etching in plasma with a pulsed bias at and .
Comparison between experimental (features) and model (lines) averaged etch rates of , SiCH, and porous SiOCH in plasma with a pulsed bias at (black) and (gray).
Fluorocarbon thick layer averaged etch rates in continuous (triangles and dashed lines) and pulsed modes at (squares and dashed black lines) and (stars and dashed gray lines) compared to modeled etch rates (straight lines).
Porous SiOCH (triangle), (star), SiCH (square) etch rates in , (25% and 50%), and (25% and 50%) at in continuous mode in function of fluorine on carbon ratio of the fluorocarbon layer.
Fluorine to carbon ratio of the fluorocarbon layer on porous SiOCH (triangle), (star), SiCH (square), Si (cross), and SiOCH (circle) vs the bias voltage in continuous and pulsed modes.
Schematic representation of material etch rate and fluorocarbon thickness variations with time over one pulse period.
Comparison between experimental (features) and enhanced model (lines) averaged etch rates of (a), Si (b), SiCH (c), SiOCH (d), and porous SiOCH (e) in plasma with a pulsed bias at (black) and (gray). In (f), porous SiOCH etch rate model has been corrected at to fit experimental results and the same correction has been applied at (see text).
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