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Photoluminescence of Ga-doped ZnO film grown on (0001) by plasma-assisted molecular beam epitaxy
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10.1063/1.2783956
/content/aip/journal/jap/102/7/10.1063/1.2783956
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2783956
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured mobility and resistivity of Ga:ZnO. Inset shows the change of Ga concentration as a function of .

Image of FIG. 2.
FIG. 2.

X-ray -rocking curves (XRC) and RHEED patterns of undoped ZnO and Ga:ZnO grown on .

Image of FIG. 3.
FIG. 3.

(a) Photoluminescence spectra (solid curves) of Ga:ZnO taken at and theoretically calculated fitting curves (open circles) by the Stark effect, and (b) Arrhenius plot of the emission intensity as a function of temperature.

Image of FIG. 4.
FIG. 4.

Experimentally observed linewidth of PL emission (solid circle) and the theoretically calculated one (dotted curves); broadening due to (thermal), and impurity fluctuation in cases of (nondegenerate) or (degenerate) and (impurity band).

Image of FIG. 5.
FIG. 5.

Variations of energy position and total intensity of the emission peaks.

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/content/aip/journal/jap/102/7/10.1063/1.2783956
2007-10-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of Ga-doped ZnO film grown on c‐Al2O3 (0001) by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2783956
10.1063/1.2783956
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