Measured mobility and resistivity of Ga:ZnO. Inset shows the change of Ga concentration as a function of .
X-ray -rocking curves (XRC) and RHEED patterns of undoped ZnO and Ga:ZnO grown on .
(a) Photoluminescence spectra (solid curves) of Ga:ZnO taken at and theoretically calculated fitting curves (open circles) by the Stark effect, and (b) Arrhenius plot of the emission intensity as a function of temperature.
Experimentally observed linewidth of PL emission (solid circle) and the theoretically calculated one (dotted curves); broadening due to (thermal), and impurity fluctuation in cases of (nondegenerate) or (degenerate) and (impurity band).
Variations of energy position and total intensity of the emission peaks.
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