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Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate
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10.1063/1.2785944
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Affiliations:
1 Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
2 Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
a) Electronic mail: takamitsu.ishihara@toshiba.co.jp
J. Appl. Phys. 102, 073702 (2007)
/content/aip/journal/jap/102/7/10.1063/1.2785944
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2785944
View: Figures

## Figures

FIG. 1.

Electron concentration in the poly-Si gate calculated by a device simulator.

FIG. 2.

Electrostatic potential distribution in the poly-Si gate calculated by a device simulator.

FIG. 3.

Schematic diagrams of (a) the continuous distribution of impurities in the poly-Si gate and (b) the coexistence of the continuous and discrete distributions of impurities in the poly-Si gate.

FIG. 4.

Schematic diagram that shows the step function approximation in describing the free carrier distribution in the poly-Si gate.

FIG. 5.

Schematic diagram that shows the multistep function approximation in describing the free carrier distribution in the poly-Si gate.

FIG. 6.

Electron concentration distributions in the poly-Si gate with and without the polyquantum effect calculated by a device simulator.

FIG. 7.

Comparison of the dependence of calculated by the screening model 1 and the screening model 2 for and . The gate oxide thickness is taken to be .

FIG. 8.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

FIG. 9.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

FIG. 10.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

FIG. 11.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 12.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 13.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 14.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 15.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 16.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

FIG. 17.

Comparison of the experimental mobility-lowering component with calculated by our screening model 3 at of .

FIG. 18.

Mesh structure in the poly-Si gate.

FIG. 19.

Schematic diagrams denoting the charged centers in the region of .

FIG. 20.

Schematic diagrams denoting the charged centers in the region of .

FIG. 21.

Schematic diagrams denoting the charged centers in the region of .

FIG. 22.

Schematic diagrams denoting the charged centers in the region of .

/content/aip/journal/jap/102/7/10.1063/1.2785944
2007-10-02
2014-04-17

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