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Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate
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10.1063/1.2785944
/content/aip/journal/jap/102/7/10.1063/1.2785944
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2785944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electron concentration in the poly-Si gate calculated by a device simulator.

Image of FIG. 2.
FIG. 2.

Electrostatic potential distribution in the poly-Si gate calculated by a device simulator.

Image of FIG. 3.
FIG. 3.

Schematic diagrams of (a) the continuous distribution of impurities in the poly-Si gate and (b) the coexistence of the continuous and discrete distributions of impurities in the poly-Si gate.

Image of FIG. 4.
FIG. 4.

Schematic diagram that shows the step function approximation in describing the free carrier distribution in the poly-Si gate.

Image of FIG. 5.
FIG. 5.

Schematic diagram that shows the multistep function approximation in describing the free carrier distribution in the poly-Si gate.

Image of FIG. 6.
FIG. 6.

Electron concentration distributions in the poly-Si gate with and without the polyquantum effect calculated by a device simulator.

Image of FIG. 7.
FIG. 7.

Comparison of the dependence of calculated by the screening model 1 and the screening model 2 for and . The gate oxide thickness is taken to be .

Image of FIG. 8.
FIG. 8.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

Image of FIG. 9.
FIG. 9.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

Image of FIG. 10.
FIG. 10.

Comparison of the dependence of calculated by the screening models 2 and 3 and the depletion approximation model for and . The gate oxide thickness is taken to be .

Image of FIG. 11.
FIG. 11.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 12.
FIG. 12.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 13.
FIG. 13.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 14.
FIG. 14.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 15.
FIG. 15.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 16.
FIG. 16.

Comparison of the dependence of calculated by the screening model 3 and the depletion approximation model for and . and the gate oxide thickness are taken to be and , respectively.

Image of FIG. 17.
FIG. 17.

Comparison of the experimental mobility-lowering component with calculated by our screening model 3 at of .

Image of FIG. 18.
FIG. 18.

Mesh structure in the poly-Si gate.

Image of FIG. 19.
FIG. 19.

Schematic diagrams denoting the charged centers in the region of .

Image of FIG. 20.
FIG. 20.

Schematic diagrams denoting the charged centers in the region of .

Image of FIG. 21.
FIG. 21.

Schematic diagrams denoting the charged centers in the region of .

Image of FIG. 22.
FIG. 22.

Schematic diagrams denoting the charged centers in the region of .

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/content/aip/journal/jap/102/7/10.1063/1.2785944
2007-10-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2785944
10.1063/1.2785944
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