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Femtosecond carrier dynamics of thin films grown on GaN (0001): Effect of carrier-defect scattering
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10.1063/1.2786610
/content/aip/journal/jap/102/7/10.1063/1.2786610
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786610
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (10.5) reciprocal space maps of epilayers with InN mole fraction (a) and (b) .

Image of FIG. 2.
FIG. 2.

(Color online) Transient absorption measurements in ultrathin alloys with thickness of at fluence of . The different color curves present the dynamic behavior of the samples at different probing wavelengths. (a) ; the inset shows the absorption changes at probing wavelengths of 850 and again. (b) and (c) ; the inset shows the degenerated absorption change.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Phonon emission time as a function of the probing energy for and ternary alloys. The red lines represent the linear fits with the same slope. (b) Hot phonon/carrier relaxation times as a function of the probing energy for and ternary alloys. The dashed lines represent the absorption band edge of each sample.

Image of FIG. 4.
FIG. 4.

(Color online) Numerical simulation fitting results for the . The bold black line throughout the experimental data (open circles) represents the total absorption change based on the two individual contributions: SF represented with the red line and FC represented with the blue line.

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/content/aip/journal/jap/102/7/10.1063/1.2786610
2007-10-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Femtosecond carrier dynamics of InxGa1−xN thin films grown on GaN (0001): Effect of carrier-defect scattering
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786610
10.1063/1.2786610
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