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Governing equations of the terminal current Green’s functions and their application to derivation of the Nyquist theorem for multiterminal semiconductor devices
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10.1063/1.2786611
/content/aip/journal/jap/102/7/10.1063/1.2786611
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786611
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Real parts of the anode current Green’s function for electrons and anode current Green’s function for holes for a 1D junction diode obtained from both the governing equation approach and the generalized adjoint approach. We find no difference between the two results. The diode has an abrupt junction with . Both the region and the region are long and the minority-carrier lifetimes are assumed to be for both carriers. .

Image of FIG. 2.
FIG. 2.

Real part of the drain current Green’s function and imaginary part of the gate current Green’s function for a along the channel at the interface obtained from both the governing equation approach and the generalized adjoint approach. The MOSFET has a gate length of , and , and position 0 and are the source and drain ends of the gate oxide, respectively. The gate voltage is set at , and “linear” and “saturation” denote the cases where the drain voltages are given at 0.1 and , respectively. .

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/content/aip/journal/jap/102/7/10.1063/1.2786611
2007-10-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Governing equations of the terminal current Green’s functions and their application to derivation of the Nyquist theorem for multiterminal semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786611
10.1063/1.2786611
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