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Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition epilayers
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10.1063/1.2786675
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    Affiliations:
    1 Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, Texas 77204-5004, USA and Department of Physics, University of Houston, Houston, Texas 77204-5004, USA
    2 Raman Laboratory, Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5002, USA
    3 Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, Texas 77204-5004, USA and Department of Physics, University of Houston, Houston, Texas 77204-5004, USA
    a) Present address: International Center for Condensed Matter Physics, University of Brasilia, 70904-970 Brasilia, DF, Brazil.
    b) Present address: Groupe d’Etude de la Matière Condensée (GEMaC/CNRS-UVSQ), 1 place Aristide Briand, 92195 Meudon Cedex, France.
    c) Author to whom correspondence should be addressed. Electronic mail: afreundlich@uh.edu
    J. Appl. Phys. 102, 073716 (2007); http://dx.doi.org/10.1063/1.2786675
/content/aip/journal/jap/102/7/10.1063/1.2786675
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786675

Figures

Image of FIG. 1.
FIG. 1.

XRD rocking curves obtained for epilayers grown on GaAs substrates.

Image of FIG. 2.
FIG. 2.

Photoluminescence spectra obtained at for a epilayer as a function of duration of the rapid annealing process (RTA) at . The lines are provided for eye guidance.

Image of FIG. 3.
FIG. 3.

Absorption and PL spectra obtained at low temperature for the epilayer thermally annealed at . , , and correspond to the conduction-to-valence subband energy gaps, the excitonic transitions, and their Rydberg energies, respectively. The and subscripts refer to and spin momenta.

Image of FIG. 4.
FIG. 4.

PL spectra for the epilayers obtained at .

Image of FIG. 5.
FIG. 5.

(Color online) Low-temperature experimental PL data plotted as a function of N composition for pseudomorphically strained GaAsN epilayers. Open circles are data obtained in this work, and solid squares and stars are data taken from Refs. 25 and 36, respectively. Curves are calculated using the band anticrossing model considering the effect of the lattice mismatch.

Image of FIG. 6.
FIG. 6.

(Color online) Experimental PL data (, symbols) plotted as a function of N composition for relaxed films with (solid triangles) and partially relaxed GaAsN epilayers (solid circles). A better description of the experimental data is obtained using the modified band anticrossing model (dashed line). Equation (7) in this paper and LDA calculations for bulk system, taken from the Ref. 14 (dotted line), are included. Conventional band anticrossing model (solid line) is also included for comparison.

Tables

Generic image for table
Table I.

Structural characteristics of samples studied in this work. The numbers in parentheses represent the uncertainty in the last digit.

Generic image for table
Table II.

Band structure parameters of zinc-blende structure taken from Refs. 33 and 34 and used to calculate the strain induced valence-band splitting in .

Generic image for table
Table III.

Photoluminescence peak position and data calculated using BAC models for all samples studied here.

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/content/aip/journal/jap/102/7/10.1063/1.2786675
2007-10-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786675
10.1063/1.2786675
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