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Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition epilayers
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10.1063/1.2786675
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    Affiliations:
    1 Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, Texas 77204-5004, USA and Department of Physics, University of Houston, Houston, Texas 77204-5004, USA
    2 Raman Laboratory, Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5002, USA
    3 Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, Texas 77204-5004, USA and Department of Physics, University of Houston, Houston, Texas 77204-5004, USA
    a) Present address: International Center for Condensed Matter Physics, University of Brasilia, 70904-970 Brasilia, DF, Brazil.
    b) Present address: Groupe d’Etude de la Matière Condensée (GEMaC/CNRS-UVSQ), 1 place Aristide Briand, 92195 Meudon Cedex, France.
    c) Author to whom correspondence should be addressed. Electronic mail: afreundlich@uh.edu
    J. Appl. Phys. 102, 073716 (2007); http://dx.doi.org/10.1063/1.2786675
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/content/aip/journal/jap/102/7/10.1063/1.2786675
2007-10-11
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786675
10.1063/1.2786675
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