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Decoupling of silicon carbide optical sensor response for temperature and pressure measurements
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10.1063/1.2786889
/content/aip/journal/jap/102/7/10.1063/1.2786889
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786889

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the experimental setup for the sensor experiments.

Image of FIG. 2.
FIG. 2.

Reflected power of silicon carbide upon exposure to nitrogen gas at pressures of (a) , (b) , (c) , and (d) as a function of temperature from for normal incidence angle.

Image of FIG. 3.
FIG. 3.

Reflected power of silicon carbide upon exposure to different nitrogen and methane partial gas pressures as a function of temperature from for normal incidence angle: (a) nitrogen , (b) nitrogen , (c) nitrogen , and (d) nitrogen .

Image of FIG. 4.
FIG. 4.

A typical cyclic reflected power profile (complementary Airy pattern) showing the phase angles between the adjacent branches of the cyclic pattern.

Image of FIG. 5.
FIG. 5.

Schematic diagram for change of optical path length due to pressure.

Image of FIG. 6.
FIG. 6.

(a) Reflected power of silicon carbide at atmospheric pressure and temperature ranging from and (b) comparison of experimental result with the Lorentz-Lorenz model at atmospheric pressure .

Image of FIG. 7.
FIG. 7.

(a). Refractive index of the compressed layer upon exposure to nitrogen pressure as a function of temperature from . (b). Refractive index of the compressed layer upon exposure to nitrogen pressure as a function of temperature from . (c). Refractive index of the compressed layer upon exposure to nitrogen pressure as a function of temperature from . (d). Refractive index of the compressed layer upon exposure to nitrogen pressure as a function of temperature from .

Image of FIG. 8.
FIG. 8.

(a). Refractive index of the compressed layer upon exposure to nitrogen and methane partial (nitrogen ) pressures as a function of temperature from . (b) Refractive index of the compressed layer upon exposure to nitrogen and methane partial (nitrogen ) pressures as a function of temperature from . (c). Refractive index of the compressed layer upon exposure to nitrogen and methane partial (nitrogen ) pressures as a function of temperature from . (d). Refractive index of the compressed layer upon exposure to nitrogen and methane partial nitrogen ) pressures as a function of temperature from .

Image of FIG. 9.
FIG. 9.

Laser-microstructured embedded SiC layer acting as an optical absorber to produce an optical response as a function of temperature only, i.e., the embedded layer acts as an uncompressed layer because it is not affected by the gas pressure, making the embedded SiC layer a suitable temperature sensor.

Image of FIG. 10.
FIG. 10.

Monotonic optical response of laser-microstructured embedded SiC temperature sensor used for decoupling the temperature and pressure when a SiC crystal is used as a sensor.

Image of FIG. 11.
FIG. 11.

(a). Refractive index of the compressed layer upon exposure to different temperatures as a function of nitrogen pressure ( axis in ln scale). (b). Refractive index of the compressed layer upon exposure to different temperatures as a function of nitrogen and methane partial pressures ( axis in ln scale).

Tables

Generic image for table
Table I.

Experimental values of at different pressures.

Generic image for table
Table II.

Experimental values of at different temperatures.

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/content/aip/journal/jap/102/7/10.1063/1.2786889
2007-10-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Decoupling of silicon carbide optical sensor response for temperature and pressure measurements
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2786889
10.1063/1.2786889
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