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Optical properties of a Si delta-doped quantum well with ultraviolet emission
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10.1063/1.2794714
/content/aip/journal/jap/102/7/10.1063/1.2794714
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2794714
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of single quantum well structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Current-voltage profile of a Si delta-doped GaN sample grown at . (b) The carrier density of Si delta-doped layer depending on flow rate. The inset shows the schematic diagram of sample for measurement.

Image of FIG. 3.
FIG. 3.

(a) PL spectra of SQW depending on the position of Si delta-doped layer in the GaN barrier layer. (b) The band diagram of SQW depending on the position of Si delta-doped layer in the GaN barrier layer.

Image of FIG. 4.
FIG. 4.

The temperature-dependent PL intensity of single quantum well depending on the position of Si delta-doped layer in the GaN barrier layer.

Image of FIG. 5.
FIG. 5.

(Color online) The temperature-dependent PL spectra of single quantum well depending on the position of Si delta-doped layer in the GaN barrier layer.

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/content/aip/journal/jap/102/7/10.1063/1.2794714
2007-10-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of a Si delta-doped InGaN∕GaN quantum well with ultraviolet emission
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/7/10.1063/1.2794714
10.1063/1.2794714
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