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AlAs quantum wells: Transport properties of the two-dimensional electron gas
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10.1063/1.2798591
/content/aip/journal/jap/102/8/10.1063/1.2798591
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2798591
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Mobility vs electron density for a quantum well of width (solid line) and (dashed line) for interface-roughness scattering with and .

Image of FIG. 2.
FIG. 2.

Ratio vs electron density for a quantum well of width for interface-roughness scattering with and different values of (, , and ).

Image of FIG. 3.
FIG. 3.

Resistance ratio vs electron density for a quantum well of width for interface-roughness scattering with and different values of (, , and ).

Image of FIG. 4.
FIG. 4.

Mobility vs electron density for a quantum well of width (solid line), (dashed line), and (dotted line) for impurity scattering with impurity density and for impurity position (residual impurities).

Image of FIG. 5.
FIG. 5.

Mobility vs electron density for a quantum well of width (solid line), (dashed line), and (dotted line) for impurity scattering with impurity density and for impurity position (remote doping).

Image of FIG. 6.
FIG. 6.

Ratio vs electron density for impurities at the center of the QW and for different quantum wells of width (solid line) and (dashed line).

Image of FIG. 7.
FIG. 7.

Resistance ratio vs electron density for impurities at and different quantum wells of width (solid line), (dashed line), and (dotted line).

Image of FIG. 8.
FIG. 8.

Resistance ratio vs electron density for impurities at and different quantum wells of width (solid line), (dashed line), and (dotted line).

Image of FIG. 9.
FIG. 9.

Resistance ratio vs electron density for impurities and different quantum well of width (solid line), (dashed line), and (dotted line).

Image of FIG. 10.
FIG. 10.

Critical electron density for a conducting phase and an insulating phase vs width of the QW. For the solid lines interface-roughness scattering with and is taken into account, on the left for and on the right for . For the dashed lines impurity scattering with and (remote doping) and interface-roughness scattering is assumed to be present. For the dotted lines impurity scattering with and (residual impurities) and interface-roughness scattering is taken into account.

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/content/aip/journal/jap/102/8/10.1063/1.2798591
2007-10-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlAs quantum wells: Transport properties of the two-dimensional electron gas
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2798591
10.1063/1.2798591
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