Schematic of a CL spectrum from the Si-doped GaAs fitted with an asymmetric double sigmoidal function showed the best fitting results. Curve I fits the low-energy part of the emission band and the interception with the background indicates the energy gap without taking into account the tails of density of the states. On the other hand, curve II considers the tails. The bell shaped curve III shows the position of the Fermi energy level.
FEG-SEM image of an indentation print in Si-doped GaAs and a schematic of the reference systems of polar coordinates used in the present work.
Typical CL experimental line scans along the  direction and the  direction [(a) and (b), respectively]. The inset in (a) is an enlargement of the plot for a zone close to the crack tip, where the equibiaxial nature of the stress field is preponderant in the overall stress state stored in the material. The PS coefficients , , and are retrieved experimentally from the best fit of the convoluted theoretical energy shifts closed to the crack tip (inset) along the  direction (a) and along the  direction (b), respectively.
Comparison between the deformation potential constants and PS coefficients obtained by the present work and the deformation potentials and PS coefficients found from previous studies.
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