1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Deformation potentials of Si-doped GaAs from microscopic residual stress fields
Rent:
Rent this article for
USD
10.1063/1.2798603
/content/aip/journal/jap/102/8/10.1063/1.2798603
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2798603

Figures

Image of FIG. 1.
FIG. 1.

Schematic of a CL spectrum from the Si-doped GaAs fitted with an asymmetric double sigmoidal function showed the best fitting results. Curve I fits the low-energy part of the emission band and the interception with the background indicates the energy gap without taking into account the tails of density of the states. On the other hand, curve II considers the tails. The bell shaped curve III shows the position of the Fermi energy level.

Image of FIG. 2.
FIG. 2.

FEG-SEM image of an indentation print in Si-doped GaAs and a schematic of the reference systems of polar coordinates used in the present work.

Image of FIG. 3.
FIG. 3.

Typical CL experimental line scans along the [110] direction and the [100] direction [(a) and (b), respectively]. The inset in (a) is an enlargement of the plot for a zone close to the crack tip, where the equibiaxial nature of the stress field is preponderant in the overall stress state stored in the material. The PS coefficients , , and are retrieved experimentally from the best fit of the convoluted theoretical energy shifts closed to the crack tip (inset) along the [110] direction (a) and along the [100] direction (b), respectively.

Tables

Generic image for table
Table I.

Comparison between the deformation potential constants and PS coefficients obtained by the present work and the deformation potentials and PS coefficients found from previous studies.

Loading

Article metrics loading...

/content/aip/journal/jap/102/8/10.1063/1.2798603
2007-10-18
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deformation potentials of Si-doped GaAs from microscopic residual stress fields
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2798603
10.1063/1.2798603
SEARCH_EXPAND_ITEM