(Color online) Photograph of the spin-LED device (left) and a schematic cross section of the device structure (right).
(Color online) RHEED images obtained during growth of (a) the RT-growth sample and (b) the HT-growth sample. The azimuth is GaAs ⟨110⟩.
Cross-sectional HRTEM images of (a) the RT-growth sample and (b) the HT-growth sample.
(Color online) EL spectra of the spin-LEDs under a magnetic field at room temperature, analyzed for left- and right- circular polarizations. The magnetic field is applied along the surface normal and the spectra are collected along the field direction. (a) RT-growth sample; the inset shows the EL spectrum at . (b) HT-growth sample.
(Color online) Magnetic field dependence of the EL polarization of the HT-growth sample with a bias of at room temperature. The EL spectra are shown in the inset.
(Color online) Bias dependence of the EL polarization of the HT-growth sample at a magnetic field of . The inset shows the current-bias characteristics of the device.
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