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Growth condition dependence of spin-polarized electroluminescence in ∕light-emitting diodes
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10.1063/1.2800818
/content/aip/journal/jap/102/8/10.1063/1.2800818
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2800818
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Photograph of the spin-LED device (left) and a schematic cross section of the device structure (right).

Image of FIG. 2.
FIG. 2.

(Color online) RHEED images obtained during growth of (a) the RT-growth sample and (b) the HT-growth sample. The azimuth is GaAs ⟨110⟩.

Image of FIG. 3.
FIG. 3.

Cross-sectional HRTEM images of (a) the RT-growth sample and (b) the HT-growth sample.

Image of FIG. 4.
FIG. 4.

(Color online) EL spectra of the spin-LEDs under a magnetic field at room temperature, analyzed for left- and right- circular polarizations. The magnetic field is applied along the surface normal and the spectra are collected along the field direction. (a) RT-growth sample; the inset shows the EL spectrum at . (b) HT-growth sample.

Image of FIG. 5.
FIG. 5.

(Color online) Magnetic field dependence of the EL polarization of the HT-growth sample with a bias of at room temperature. The EL spectra are shown in the inset.

Image of FIG. 6.
FIG. 6.

(Color online) Bias dependence of the EL polarization of the HT-growth sample at a magnetic field of . The inset shows the current-bias characteristics of the device.

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/content/aip/journal/jap/102/8/10.1063/1.2800818
2007-10-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth condition dependence of spin-polarized electroluminescence in Fe∕MgO∕light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/8/10.1063/1.2800818
10.1063/1.2800818
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