(Color online) Schematic diagram of the 20 period MQWs.
(Color online) XRD-reciprocal space mapping for asymmetric diffractions for samples A–D. and indicate the reciprocal of and , respectively.
(Color online) (0002) scans (solid lines) of samples B, D, and F and their simulated diffraction curves (dotted lines).
(Color online) [(a)–(c)] AFM images of samples B, D, and F. (d) A line profile of one of pit in the surface morphology of sample F.
(Color online) Pit density (filled triangles)/depth (filled circles) and difference in the in-plane lattice constant between the MQWs and InGaN interlayer (filled squares) estimated from XRD-RSM as a function of InN well thickness.
(Color online) RT-PL spectra and their fitting with Gaussian function of samples A, B, C, D, and F.
(Color online) Comparison between PL peak energies and calculated transition energies of MQWs with different InN well thickness. Solid triangles and circles indicate experimentally obtained PL peak energies for the coherently grown MQWs and the MQWs with lattice relaxation. In the calculation, the internal electric fields in the MQWs were assumed to be 0 (solid line), 1, 2, and (dashed lines).
Summary of MQW samples examined in this study. Here, , , , and are InN well thickness estimated by both simulated diffraction curves and RSM measurement, estimated InGaN barrier thickness, In content in InGaN barrier/interlayer, and lattice relaxation parameter of InN wells, respectively.
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