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Fabrication and properties of coherent-structure In-polarity multiquantum wells emitting at around
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Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the 20 period MQWs.

Image of FIG. 2.
FIG. 2.

(Color online) XRD-reciprocal space mapping for asymmetric diffractions for samples A–D. and indicate the reciprocal of and , respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (0002) scans (solid lines) of samples B, D, and F and their simulated diffraction curves (dotted lines).

Image of FIG. 4.
FIG. 4.

(Color online) [(a)–(c)] AFM images of samples B, D, and F. (d) A line profile of one of pit in the surface morphology of sample F.

Image of FIG. 5.
FIG. 5.

(Color online) Pit density (filled triangles)/depth (filled circles) and difference in the in-plane lattice constant between the MQWs and InGaN interlayer (filled squares) estimated from XRD-RSM as a function of InN well thickness.

Image of FIG. 6.
FIG. 6.

(Color online) RT-PL spectra and their fitting with Gaussian function of samples A, B, C, D, and F.

Image of FIG. 7.
FIG. 7.

(Color online) Comparison between PL peak energies and calculated transition energies of MQWs with different InN well thickness. Solid triangles and circles indicate experimentally obtained PL peak energies for the coherently grown MQWs and the MQWs with lattice relaxation. In the calculation, the internal electric fields in the MQWs were assumed to be 0 (solid line), 1, 2, and (dashed lines).


Generic image for table
Table I.

Summary of MQW samples examined in this study. Here, , , , and are InN well thickness estimated by both simulated diffraction curves and RSM measurement, estimated InGaN barrier thickness, In content in InGaN barrier/interlayer, and lattice relaxation parameter of InN wells, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and properties of coherent-structure In-polarity InN∕In0.7Ga0.3N multiquantum wells emitting at around 1.55μm