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Trap filled limit voltage and law in space charge limited currents
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View: Figures


Image of FIG. 1.
FIG. 1.

Calculated SCL curves in a semiconductor using different models. Solid line 1 is the plot of Eq. (1). The numerically calculated curve is shown by curve 2 (single level trap) and dashed curve 4 (for exponential traps). The short straight line 3 is the plot of Eq. (2). The plot of curve calculated using the present model is shown by the dashed curve 5. Note that curves 2, 4, and 5 merge into one curve above . Inset: Curves 1 and 5 of the main figure are plotted in reduced units. These curves are universal applicable to all semiconductors and for all energy distributions.

Image of FIG. 2.
FIG. 2.

The experimental curve for undoped ZnO thin films is compared with theory. Symbols are the experimental data. Solid line is Mott’s law, dotted line is the numerically calculated curve for exponentially trap, and the dashed curve shows the curve after TFL. Note again that dotted and dashed curves merge together above TFL. The values of the parameters used in these calculations are , , , , , , and .

Image of FIG. 3.
FIG. 3.

The experimental curve of Al doped ZnO thin films is shown by “+” symbols. The theoretical curve of single level traps at is shown by dotted curve. The concentration of traps is . Mott law is shown by solid line and the curve after all the traps are filled is reached shown by dash dot curve. The values of the parameters used in these calculations are , , , , , and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trap filled limit voltage (VTFL) and V2 law in space charge limited currents