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Modified resistive switching behavior of memory films based on the interface layer formed by using Ti top electrode
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10.1063/1.2802990
/content/aip/journal/jap/102/9/10.1063/1.2802990
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2802990
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram of the device structure and the measurement system.

Image of FIG. 2.
FIG. 2.

Resistive switching behavior performed with positive and negative bias voltages showing unipolar and bipolar resistive switching by using tungsten probe directly in contact with structure.

Image of FIG. 3.
FIG. 3.

SIMS depth profile of stack using Ti top electrode.

Image of FIG. 4.
FIG. 4.

Cross-sectional HR-TEM image of a thin interface layer formed between Ti and .

Image of FIG. 5.
FIG. 5.

(a) Typical curve of the device in linear scale, applying positive bias on Ti top electrode to switch the device on and negative bias to switch it off. (b) curve in semilog scale.

Image of FIG. 6.
FIG. 6.

Variations of the resistive switching parameters in the W-probe∕ and devices, respectively. and are the resistances measured at for each device.

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/content/aip/journal/jap/102/9/10.1063/1.2802990
2007-11-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2802990
10.1063/1.2802990
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