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Modified resistive switching behavior of memory films based on the interface layer formed by using Ti top electrode
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10.1063/1.2802990
/content/aip/journal/jap/102/9/10.1063/1.2802990
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2802990
/content/aip/journal/jap/102/9/10.1063/1.2802990
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/content/aip/journal/jap/102/9/10.1063/1.2802990
2007-11-01
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2802990
10.1063/1.2802990
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