A schematic diagram of the device structure and the measurement system.
Resistive switching behavior performed with positive and negative bias voltages showing unipolar and bipolar resistive switching by using tungsten probe directly in contact with structure.
SIMS depth profile of stack using Ti top electrode.
Cross-sectional HR-TEM image of a thin interface layer formed between Ti and .
(a) Typical curve of the device in linear scale, applying positive bias on Ti top electrode to switch the device on and negative bias to switch it off. (b) curve in semilog scale.
Variations of the resistive switching parameters in the W-probe∕ and devices, respectively. and are the resistances measured at for each device.
Article metrics loading...
Full text loading...