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Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide
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Image of FIG. 1.
FIG. 1.

(a) TEM image (cross sectional view) of Ge NCs formed by annealing of an amorphous Ge layer ( thickness) deposited on an ultrathin ( thickness) for at and capped by of amorphous silicon. (b) High resolution TEM image (cross sectional view) of a Ge NC where the distance between {111} plans are evidenced.

Image of FIG. 2.
FIG. 2.

A schematic band diagram of the structure showing a NC confinement between oxide and . The conduction and valence band bendings are not shown here.

Image of FIG. 3.
FIG. 3.

Typical high frequency capacitance-voltage cycle, attributed to electron injection∕emission process in Ge NCs, which indicates the memory effect.

Image of FIG. 4.
FIG. 4.

(a) Current-voltage characteristic at a positive gate bias (inversion regime). The steps observed in the reverse curve are related to electron resonant tunneling via Ge NC discrete levels. The inset contains the corresponding conductance as a function of gate voltage. (b) Evolution of current-voltage characteristics with temperature. Current jumps appear for increasingly weak voltages when the temperature decreases.


Generic image for table
Table I.

This table gives the voltage width steps extracted from Fig. 4(a), the corresponding capacitance required for a Coulomb blockade condition, and an effective number of electrons transported by each tunneling step. The last column contains values extracted from data regrouping of the first and second columns (if we assume that the second plateau is only an anomalous step and perhaps a simple prolongation of the first).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide