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Terahertz gain on shallow donor transitions in silicon
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10.1063/1.2804756
/content/aip/journal/jap/102/9/10.1063/1.2804756
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2804756
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Principal states involved in population inversion in Si:P (left) and Si:Bi (right) (not to scale). The arrows up indicate pump transitions. The arrows down indicate the laser transitions. For Si:Bi the optical phonons, which deplete the and states, are shown by dotted arrows.

Image of FIG. 2.
FIG. 2.

Sketch of the experimental setup for pumping with the free electron laser FELIX: (1) beam splitter, (2) attenuators, (3) mirrors, (4) optical windows, (5) Ge:Ga detector, (6) metal screen, (7) laser, (8) amplifier.

Image of FIG. 3.
FIG. 3.

Sketch of the experimental setup for gain measurements with laser pumping: (1) beam splitter, (2) mirror, (3) attenuator, (4) photon drag-monitor, (5) sapphire filters, (6) Ge:Ga detector, (7) Si:P laser, (8) Si:P amplifier.

Image of FIG. 4.
FIG. 4.

Emission pulses of the Si:P laser and the free electron laser FELIX (normalized to the peak of the Si:P emission). The pulse period is 20 ns. The pump frequency corresponds to the transition.

Image of FIG. 5.
FIG. 5.

Pulsed gain of the (a) and (b) transitions of the Si:P laser and of the transition of the Si:Bi laser as a function of the FELIX macropulse energy (dots: experimental data; straight lines: model calculation based on the solution of balance equations).

Image of FIG. 6.
FIG. 6.

Gain of the transitions in Si:P when excited with a laser (dots: experimental data; straight line: model calculation based on the solution of balance equations).

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/content/aip/journal/jap/102/9/10.1063/1.2804756
2007-11-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz gain on shallow donor transitions in silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2804756
10.1063/1.2804756
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