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High quality epitaxial using plasma nitridation-mediated epitaxy: The effects of the capping layer
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10.1063/1.2805649
/content/aip/journal/jap/102/9/10.1063/1.2805649
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2805649
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The XPS spectrums in the (a) nitrogen core level and (b) silicon core level after plasma exposure on Si(001) substrate at [(a) N-Si: solid line, N-O: dashed line and (b) Si-N: dotted line, Si-Si: solid line, Si-O: dashed line].

Image of FIG. 2.
FIG. 2.

The cross-sectional HR-TEM image of the amorphous interlayer at .

Image of FIG. 3.
FIG. 3.

The sheet resistance of annealed samples at various after removal of unreacted metal layer and interlayer (▴: ex situ Ti capping, ●: in situ Ti capping).

Image of FIG. 4.
FIG. 4.

The XRD spectra of (a) 20 nm in situ Ti/20 nm Co/Si(001) and (b) 20 nm ex situ Ti/20 nm Co/Si(001) after RTA at various .

Image of FIG. 5.
FIG. 5.

(a) The cross-sectional TEM image and (b) EDS mapping by STEM for in situ Ti capped Co and (c) the cross-sectional TEM image and (d) EDS mapping by STEM for ex situ Ti capped Co. The samples were annealed at .

Image of FIG. 6.
FIG. 6.

The cross-sectional HR-TEM image of ex situ Ti capped Co annealed at (inset: SADP of the interface between and Si).

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/content/aip/journal/jap/102/9/10.1063/1.2805649
2007-11-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/102/9/10.1063/1.2805649
10.1063/1.2805649
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