The XPS spectrums in the (a) nitrogen core level and (b) silicon core level after plasma exposure on Si(001) substrate at [(a) N-Si: solid line, N-O: dashed line and (b) Si-N: dotted line, Si-Si: solid line, Si-O: dashed line].
The cross-sectional HR-TEM image of the amorphous interlayer at .
The sheet resistance of annealed samples at various after removal of unreacted metal layer and interlayer (▴: ex situ Ti capping, ●: in situ Ti capping).
The XRD spectra of (a) 20 nm in situ Ti/20 nm Co/Si(001) and (b) 20 nm ex situ Ti/20 nm Co/Si(001) after RTA at various .
(a) The cross-sectional TEM image and (b) EDS mapping by STEM for in situ Ti capped Co and (c) the cross-sectional TEM image and (d) EDS mapping by STEM for ex situ Ti capped Co. The samples were annealed at .
The cross-sectional HR-TEM image of ex situ Ti capped Co annealed at (inset: SADP of the interface between and Si).
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