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Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits
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10.1063/1.2826744
/content/aip/journal/jap/103/1/10.1063/1.2826744
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2826744
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) MR ratio of MTJs with single and SAF free layers vs inverse square of MTJ width. (c) of SAF and of the single layer vs inverse of MTJ width.

Image of FIG. 2.
FIG. 2.

and of the 2SL-FC-SAF with and SAF as a function of MTJ width. Dashed line is calculated of NiFe single layer with . Solid lines are fitted results of calculation based on Ref. 19.

Image of FIG. 3.
FIG. 3.

Distributions of , , and of 90 nm wide MTJs with (a) SAF and (b) 2SL-FC-SAF with FCL3. Field is for the direction of the writing line.

Image of FIG. 4.
FIG. 4.

and of the 2SL-FC-SAF with FCL1 (solid line) and Ru(0.3 nm)/Ta(0.2 nm) FCL(dashed line) as a function of MTJ width. , 3, and 4 nm are shown as circles, triangles, and rectangles, respectively. In 2SL-FC-SAF free layer, 2L-SAF (open diamonds) and 4L-SAF (closed diamonds) are used. Inset arrows indicate magnetic configuration for each free layer.

Image of FIG. 5.
FIG. 5.

Normality plots of and of the 170 nm wide MTJs for (a) SAF and 2SL-FC-SAFs with FCL1; (b) ; (c) ; and (d) .

Image of FIG. 6.
FIG. 6.

Normality plots of and of the 110 nm wide MTJs for (a) SAF and 2SL-FC-SAFs with ; (b) FCL2; and (c) FCL3.

Image of FIG. 7.
FIG. 7.

Conversion efficiency of current to field in the word line of Cu yoke wire as a function of word line width. Distance from the word line to the MTJ was 80 nm and MTJ length was same as word line width.

Image of FIG. 8.
FIG. 8.

Normalized writing current vs thermal-activation lifetime for direct switching of 110 nm wide MTJs with single layer and 2SL-FC-SAFs with FCL1.

Image of FIG. 9.
FIG. 9.

Thermal activation factor vs product of total and of free layers in 110 nm wide MTJs.

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/content/aip/journal/jap/103/1/10.1063/1.2826744
2008-01-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2826744
10.1063/1.2826744
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