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Localization of He induced nanovoids in buried thin films
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10.1063/1.2826994
/content/aip/journal/jap/103/1/10.1063/1.2826994
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2826994
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-TEM images in off-Bragg condition of the Si Cz (a) and MBE sample (b) after implantation at 20 keV and 1 h thermal annealing. White and black lines are, respectively, the vacancy (not in scale) and He profiles simulated by SRIM code. (c) is the magnification of (b) and reveals that very small voids are also present within the shallower Ge-enriched layer (dark linear band at about 170 nm depth).

Image of FIG. 2.
FIG. 2.

X-TEM images in off-Bragg condition of the MBE sample after implantation at 30 keV and 1 h thermal annealing. White and black lines are, respectively, the vacancy (not in scale) and He profiles simulated by SRIM code. The two Ge-enriched layers are visible as dark bands at 170 nm and 240 nm depths. Very small voids (see the arrows) are within the two Ge-enriched layers.

Image of FIG. 3.
FIG. 3.

X-TEM images in off-Bragg condition of the MBE sample after multiple implantation processes at 30, 25, 20, 15, and 10 keV and thermal annealing at for 1 h. The black line represents the final He profile simulated by SRIM code.

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/content/aip/journal/jap/103/1/10.1063/1.2826994
2008-01-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localization of He induced nanovoids in buried Si1−xGex thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2826994
10.1063/1.2826994
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