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Comprehensive model of damage accumulation in silicon
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10.1063/1.2829815
/content/aip/journal/jap/103/1/10.1063/1.2829815
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2829815
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Activation energy of recrystallization as a function of implant ion mass from experimental data of Ref. 3. (Lines drawn to guide the eyes.)

Image of FIG. 2.
FIG. 2.

Simulated damage (total ) profiles for 200 keV B implant at 100 K and . (a) Up to the critical dose of . (b) Up to a dose of .

Image of FIG. 3.
FIG. 3.

Activation energy of recrystallization as a function of size of the amorphous pockets.

Image of FIG. 4.
FIG. 4.

Simulation (lines) compared to experimental data (symbols) from Ref. 3 for amorphous-crystalline transition temperatures as a function of dose rate, for (100) silicon irradiated with 80 keV ions to a dose of for Si, Ar, Ge, Kr, and Xe, and for C. Solid lines for noble gases obtained by taking into account the lattice weakening effect of the noble gas atoms. Dashed line represents the transition temperatures for Ar using the standard procedure.

Image of FIG. 5.
FIG. 5.

Sequence of simulations showing the development of the amorphous layer in silicon with increasing dose of 300 keV Si: (a) , (b) , and (c) implanted at 300 K with a dose rate of . White represents amorphous regions and gray represents amorphous pockets. Simulation: .

Image of FIG. 6.
FIG. 6.

Amorphous layer thickness as a function of implant energy for Ge PAI at a dose of . Simulations were done at room temperature and a dose rate of . Filled symbols represent experimental data (Refs. 23–26), open symbols are from simulations. Experimental characterization methods are indicated when specified.

Image of FIG. 7.
FIG. 7.

Amorphous layer thickness as a function of dose for 150 keV Ge PAI. Simulations were done at room temperature and at a dose rate of . Filled symbols represent experimental data measured by TEM (Ref. 27), open symbols are from simulations.

Image of FIG. 8.
FIG. 8.

Dose dependence of damage produced by 100 keV Si ions at room temperature and a dose rate of . Symbols show different damage components determined from the experimental annealing results from Ref. 5; dotted lines are results obtained from simulations.

Image of FIG. 9.
FIG. 9.

Simulated damage profile resulting from 1 MeV Si implantation at room temperature at various doses.

Image of FIG. 10.
FIG. 10.

Simulated normalized damage as a function of temperature for 80 keV C implantations. Post-cryogenic implantation annealing represents 10 min annealing after cryogenic temperature implantation.

Image of FIG. 11.
FIG. 11.

2D histogram of amorphous pockets composition of (a) cryogenic C implantation to a dose of , (b) post-cryogenic implantation annealing at , and (c) C implantation to a dose of (dynamic annealing).

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/content/aip/journal/jap/103/1/10.1063/1.2829815
2008-01-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive model of damage accumulation in silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2829815
10.1063/1.2829815
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