1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
Rent:
Rent this article for
USD
10.1063/1.2830981
/content/aip/journal/jap/103/1/10.1063/1.2830981
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2830981
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the fabricating process of the pyramidal patterned sapphire substrates prepared by wet etching: (a) MPSS; (b) NPSS.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the epitaxial layers and LED structure fabricated on pyramidal patterned sapphire substrates.

Image of FIG. 3.
FIG. 3.

SEM morphology of pyramidal patterned sapphire substrates prepared by wet etching: (a) MPSS; (b) NPSS.

Image of FIG. 4.
FIG. 4.

SEM image of the cross section of InGaN/GaN LED epitaxial film grown on: (a) MPSS; (b) MPSS.

Image of FIG. 5.
FIG. 5.

The high-resolution triple-axis XRD (0002) scans for the PL-LED, MPSS-LED, and NPSS-LED structures. The highest curve is the simulation result for the NPSS-LED.

Image of FIG. 6.
FIG. 6.

Light output power in relation to injection current for the PL-LED (squares), MPSS-LED (filled triangles), and NPSS-LED (open triangles). The insert is the normalized EL spectra in relation to injection current for the NPSS-LED.

Image of FIG. 7.
FIG. 7.

Curves of current-voltage of the PL-LED (squares), MPSS-LED (filled triangles), and NPSS-LED (open triangles).

Loading

Article metrics loading...

/content/aip/journal/jap/103/1/10.1063/1.2830981
2008-01-15
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/1/10.1063/1.2830981
10.1063/1.2830981
SEARCH_EXPAND_ITEM