XRD scan profiles of Ag films deposited for 40 s at various different substrate temperatures on initially native-oxide covered Si(001) substrates: (a) deposited at room temperature and then anneal-treated at for 1 h, (b) deposited at , and (c) deposited at . (d) The (002) pole figure of the Ag film deposited at room temperature followed by an annealing at . (e) The (111) pole figures of the Ag film deposited at (top) and of Si(001) substrate (bottom).
Evolution of grain sizes of Ag films analyzed with XRD. (a) The scan profiles of the Ag(002) peaks of epitaxial Ag films grown for 10, 30, and 45 s on initially native-oxide-covered Si(001) substrates at . The crystallite size estimated from the peak width is shown for each film with different growth times: 3.6 nm for 10 s, 5.9 nm for 30 s, and 7.8 nm for 45 s. (b) Grain size plotted as a function of growth time. The grain size shows periods of steady increase, interspersed with a brief interval of stagnation. Each regime is labeled I–V for further analysis.
AFM images and height profiles of Ag films grown for 10 and 15 s (regime I). Plan view images of the film surfaces (image area of ): (a) for 10 and (d) 15 s. 3D views of the boxed area: (b) for 10 and (e) 15 s. Height profiles along the horizontal scan lines: (c) for 10 and (f) 15 s.
AFM images and height profiles of Ag films grown for 20, 30, and 35 s (regimes II and III). Plan view images of area: (a) for 20, (b) 30, and (c) 35 s. Height profiles: (d) for 20, (e) 30, and (f) 35 s.
SEM images of Ag films grown for (a) 40, (b) 50, and (c) 60 s. (d) TEM diffraction pattern of a Ag film grown for 90 s: along cross-sectional orientation of the film, i.e., along the in-plane -type orientation for . The inset is a diffraction pattern of pure Si.
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