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Electron effective mass and mobility in heavily doped -GaAsN probed by Raman scattering
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10.1063/1.2927387
/content/aip/journal/jap/103/10/10.1063/1.2927387
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/10/10.1063/1.2927387

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra acquired at 80 K of the -GaAsN epilayers studied in this work (samples B–F). The inset shows the Raman spectrum of the -GaAs epilayer (sample A).

Image of FIG. 2.
FIG. 2.

Calculated -dependence of the frequency of the heavily damped LOPCM in low mobility -GaAs. The solid curve was calculated with and the dashed curve with . Inset: LOPCM line shape fit (solid line) to the Raman spectrum of sample F (dots).

Image of FIG. 3.
FIG. 3.

Optical effective mass values, , extracted from the analysis of the Raman measurements (dots) and values predicted by the two-level BAC model for the N composition and of the studied samples (open squares). The solid (dashed) line is intended only as a guide to the eye to show the increasing trend of with N content in our samples, as derived from the Raman spectra (BAC model).

Tables

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Table I.

List of -type Se-doped epilayers studied in this work.

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/content/aip/journal/jap/103/10/10.1063/1.2927387
2008-05-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/10/10.1063/1.2927387
10.1063/1.2927387
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