Raman spectra acquired at 80 K of the -GaAsN epilayers studied in this work (samples B–F). The inset shows the Raman spectrum of the -GaAs epilayer (sample A).
Calculated -dependence of the frequency of the heavily damped LOPCM in low mobility -GaAs. The solid curve was calculated with and the dashed curve with . Inset: LOPCM line shape fit (solid line) to the Raman spectrum of sample F (dots).
Optical effective mass values, , extracted from the analysis of the Raman measurements (dots) and values predicted by the two-level BAC model for the N composition and of the studied samples (open squares). The solid (dashed) line is intended only as a guide to the eye to show the increasing trend of with N content in our samples, as derived from the Raman spectra (BAC model).
List of -type Se-doped epilayers studied in this work.
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