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Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films
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10.1063/1.2927494
/content/aip/journal/jap/103/10/10.1063/1.2927494
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/10/10.1063/1.2927494
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Figures

Image of FIG. 1.
FIG. 1.

(a) Variation of the atomic concentration of the films (deposited on Si substrates) as a function of the reactive gas flow. An average of was estimated for the RBS concentration resolution. (b) Metalloid over the zirconium atomic ratios, , , and as a function of the reactive gas flow. The uncertainty was determined by error propagation.

Image of FIG. 2.
FIG. 2.

Equilibrium substrate temperature as a function of the reactive gas mixture flow. The error was determined by the maximum deviation to the average value.

Image of FIG. 3.
FIG. 3.

(a) XRD patterns of the samples (deposited on Si substrates) prepared within the first two composition zones. (b) XRD patterns of the samples (deposited on Si substrates) prepared within zones III and IV.

Image of FIG. 4.
FIG. 4.

XPS valence band spectra of representative samples (deposited on Si substrates) within the four zones.

Image of FIG. 5.
FIG. 5.

Subtraction XPS valence band spectrum between pairs of samples from consecutive zones; (a) zone II—zone I samples; (b) zone III—zone II samples; (c) zone IV—zone III samples.

Image of FIG. 6.
FIG. 6.

XPS Zr spectra of different sputter-cleaning times for sample prepared with a reactive gas flow of .

Image of FIG. 7.
FIG. 7.

XPS calculated metalloid over the zirconium atomic ratios, , , and as a function of the reactive gas flow. The results were obtained after the steady state has been reached by sputter cleaning. The error was determined by error propagation.

Image of FIG. 8.
FIG. 8.

Zr spectrum for selected samples prepared within each of the four zones, after the steady state has been reached by sputter cleaning.

Image of FIG. 9.
FIG. 9.

N spectra for selected samples prepared within each of the four zones, after the steady state has been reached by sputter cleaning.

Image of FIG. 10.
FIG. 10.

N spectra for selected as-deposited samples, prepared within the first three zones.

Image of FIG. 11.
FIG. 11.

O spectra for selected samples, prepared within each of the four zones, after the steady state has been reached by sputter cleaning. For comparison purposes, the figure also presents the O spectra for a monoclinic sample.

Image of FIG. 12.
FIG. 12.

Electrical resistivity variation at room temperature as a function of the reactive gases, for the oxynitride, nitride, and oxide series (films deposited on glass substrates). The error bar was determined by maximum deviation to the average value.

Image of FIG. 13.
FIG. 13.

Electrical resistivity evolution as a function of the temperature. The error bar was determined by maximum deviation to the average value.

Image of FIG. 14.
FIG. 14.

Electrical conductivity activation energies as a function of the reactive gas flow for samples from zones II–IV. The error bar was determined by maximum deviation to the average value.

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/content/aip/journal/jap/103/10/10.1063/1.2927494
2008-05-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/10/10.1063/1.2927494
10.1063/1.2927494
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